MoS2 functionalization for ultra-thin atomic layer deposited dielectrics von Azcatl, Angelica, McDonnell, Stephen, K. C., Santosh, Peng, Xin, Dong, Hong, Qin, Xiaoye, Addou, Rafik, Mordi, Greg I., Lu, Ning, Kim, Jiyoung, Kim, Moon J., Cho, Kyeongjae, Wallace, Robert M.

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A crystalline oxide passivation for Al2O3/AlGaN/GaN von Qin, Xiaoye, Dong, Hong, Kim, Jiyoung, Wallace, Robert M.

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Remote Plasma Oxidation and Atomic Layer Etching of MoS2 von Zhu, Hui, Qin, Xiaoye, Cheng, Lanxia, Azcatl, Angelica, Kim, Jiyoung, Wallace, Robert M

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In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors von Qin, Xiaoye, Wallace, Robert M.

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Atomic Layer Deposition of a High‑k Dielectric on MoS2 Using Trimethylaluminum and Ozone von Cheng, Lanxia, Qin, Xiaoye, Lucero, Antonio T, Azcatl, Angelica, Huang, Jie, Wallace, Robert M, Cho, Kyeongjae, Kim, Jiyoung

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Impact of N2 and forming gas plasma exposure on the growth and interfacial characteristics of Al2O3 on AlGaN von Qin, Xiaoye, Dong, Hong, Brennan, Barry, Azacatl, Angelica, Kim, Jiyoung, Wallace, Robert M.

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In situ surface and interface study of crystalline (3×1)-O on InAs von Qin, Xiaoye, Wang, Wei-E., Rodder, Mark S., Wallace, Robert M.

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In situ x-ray photoelectron spectroscopy and capacitance voltage characterization of plasma treatments for Al2O3/AlGaN/GaN stacks von Qin, Xiaoye, Lucero, Antonio, Azcatl, Angelica, Kim, Jiyoung, Wallace, Robert M.

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Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy von Dong, Hong, Gong, Cheng, Addou, Rafik, McDonnell, Stephen, Azcatl, Angelica, Qin, Xiaoye, Wang, Weichao, Wang, Weihua, Hinkle, Christopher L, Wallace, Robert M

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In situ isotope study of indium diffusion in InP/Al2O3 stacks von Feng, Ze, Qin, Xiaoye, Chen, Xiao, Li, Zhiyun, Huang, Rong, Shen, Yang, Ding, Ding, Wang, Yitong, Jing, Meiyi, Cui, Yi, Dingsun, An, Liu, Hui, Dong, Hong, Wallace, Robert M.

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A crystalline oxide passivation on In0.53Ga0.47As (100) von Qin, Xiaoye, Wang, Wei-E, Droopad, Ravi, Rodder, Mark S., Wallace, Robert M.

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Rapid Selective Etching of PMMA Residues from Transferred Graphene by Carbon Dioxide von Gong, Cheng, Floresca, Herman Carlo, Hinojos, David, McDonnell, Stephen, Qin, Xiaoye, Hao, Yufeng, Jandhyala, Srikar, Mordi, Greg, Kim, Jiyoung, Colombo, Luigi, Ruoff, Rodney S, Kim, Moon J, Cho, Kyeongjae, Wallace, Robert M, Chabal, Yves J

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In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN von Brennan, Barry, Qin, Xiaoye, Dong, Hong, Kim, Jiyoung, Wallace, Robert M

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Interface chemistry and surface morphology evolution study for InAs/Al2O3 stacks upon in situ ultrahigh vacuum annealing von Wang, Xinglu, Qin, Xiaoye, Wang, Wen, Liu, Yue, Shi, Xiaoran, Sun, Yong, Liu, Chen, Zhao, Jiali, Zhang, Guanhua, Liu, Hui, Cho, Kyeongjae, Wu, Rui, Wang, Jiaou, Zhang, Sen, Wallace, Robert M., Dong, Hong

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A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN von Qin, Xiaoye, Cheng, Lanxia, McDonnell, Stephen, Azcatl, Angelica, Zhu, Hui, Kim, Jiyoung, Wallace, Robert M.

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Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization von Lucero, Antonio T., Byun, Young-Chul, Qin, Xiaoye, Cheng, Lanxia, Kim, Hyoungsub, Wallace, Robert M., Kim, Jiyoung

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In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As von Lucero, Antonio T., Byun, Young-Chul, Qin, Xiaoye, Cheng, Lanxia, Kim, Hyoungsub, Wallace, Robert M., Kim, Jiyoung

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Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure von Azcatl, Angelica, Qin, Xiaoye, Prakash, Abhijith, Zhang, Chenxi, Cheng, Lanxia, Wang, Qingxiao, Lu, Ning, Kim, Moon J, Kim, Jiyoung, Cho, Kyeongjae, Addou, Rafik, Hinkle, Christopher L, Appenzeller, Joerg, Wallace, Robert M

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Two-dimensional gallium nitride realized via graphene encapsulation von Al Balushi, Zakaria Y., Wang, Ke, Ghosh, Ram Krishna, Vilá, Rafael A., Eichfeld, Sarah M., Caldwell, Joshua D., Qin, Xiaoye, Lin, Yu-Chuan, DeSario, Paul A., Stone, Greg, Subramanian, Shruti, Paul, Dennis F., Wallace, Robert M., Datta, Suman, Redwing, Joan M., Robinson, Joshua A.

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In situ plasma enhanced atomic layer deposition half cycle study of Al{sub 2}O{sub 3} on AlGaN/GaN high electron mobility transistors von Qin, Xiaoye, Wallace, Robert M.

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