Electrophysical characteristics of power MOSFETs additionally implanted with nitrogen ions von Odzaev, Vladimir B., Pyatlitski, Aliaksandr N., Prasalovich, Uladislau S., Kovalchuk, Natalya S., Soloviev, Yaroslav A., Shestovski, Dmitry V., Yavid, Valentin Yu, Yankovski, Yuri N.

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Influence of nitrogen ion implantation on the electrophysical properties of the gate dielectric of power MOSFETs von Odzaev, Vladimir B., Panfilenka, Anatoli K., Pyatlitski, Aliaksandr N., Prasalovich, Uladislau S., Kovalchuk, Natalya S., Soloviev, Yaroslav A., Filipenia, Viktar A., Shestovski, Dmitry V.

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