Thin Ga(Sb,P)/GaP quantum wells with indirect band gap: Crystal structure, energy spectrum, exciton recombination and spin dynamics von Shamirzaev, T.S., Yakovlev, D.R., Kudlacik, D., Harkort, C., Putyato, M.A., Gutakovskii, A.K., Bayer, M.

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Erratum: “Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED” surface science 677 (2018) 306–315 von Vasev, A.V., Putyato, M.A., Preobrazhenskii, V.V.

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Some geometrical aspects of diffracted waves formation on a reconstructed crystal face at RHEED von Vasev, A.V., Putyato, M.A., Preobrazhenskii, V.V.

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Kinetics of (2 × 4) → (3 × 1(6)) structural changes on GaAs(001) surfaces during the UHV annealing von Vasev, A.V., Putyato, M.A., Preobrazhenskii, V.V.

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Experimental determination of the incorporation factor of As4 during molecular beam epitaxy of GaAs von Preobrazhenskii, V.V, Putyato, M.A, Pchelyakov, O.P, Semyagin, B.R

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Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy von Cherkashin, N., Reboh, S., Hÿtch, M. J., Claverie, A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R., Chaldyshev, V. V.

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Experimental observation of interface-phonon-plasmon mode in n-GaAs/i-GaAs heterostructure von Volodin, V.A., Sinyukov, M.P., Semyagin, B.R., Putyato, M.A., Preobrazhenskiy, V.V.

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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing von Vasev, A. V., Putyato, M. A., Preobrazhenskii, V. V., Bakarov, A. K., Toropov, A. I.

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Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays von Prinz, V.Ya, Seleznev, V.A, Gutakovsky, A.K, Chehovskiy, A.V, Preobrazhenskii, V.V, Putyato, M.A, Gavrilova, T.A

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Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence von Kosarev, A. N., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Formation of low-dimensional structures in the InSb/AlAs heterosystem von Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K., Shamirzaev, T. S.

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Molecular beam epitaxy of III-[P.sub.x][As.sub.1-x] solid solutions: mechanism of composition formation in the sublattice of a Group V element von Emelyanov, E.A, Putyato, M.A, Semyagin, B.R, Feklin, D.F, Preobrazhensky, V.V

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Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Fröhlich resonance in the AsSb/AlGaAs system von Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials von Ushanov, V. I., Chaldyshev, V. V., Bert, N. A., Nevedomsky, V. N., Il’inskaya, N. D., Lebedeva, N. M., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells von Krishtopenko, S. S., Ikonnikov, A. V., Maremyanin, K. V., Bovkun, L. S., Spirin, K. E., Kadykov, A. M., Marcinkiewicz, M., Ruffenach, S., Consejo, C., Teppe, F., Knap, W., Semyagin, B. R., Putyato, M. A., Emelyanov, E. A., Preobrazhenskii, V. V., Gavrilenko, V. I.

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Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures von Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhernskiy, V. V., Putyato, M. A., Semyagin, B. R.

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Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions von Lukin, P. V., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix von Ushanov, V. I., Chaldyshev, V. V., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.

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