Optimization of InGaP metamorphic buffers grown by MOVPE von Ebert, C., Pulwin, Z., Reynolds, C.L., Ramos Sn, F., Li, Y., Farrell, S.

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Tellurium doping of InGaP for tunnel junction applications in triple junction solar cells von Ebert, C., Pulwin, Z., Byrnes, D., Paranjpe, A., Zhang, W.

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Fast growth rate GaAs and InGaP for MOCVD grown triple junction solar cells von Ebert, C, Parekh, A, Pulwin, Z, Zhang, W, Lee, D, Byrnes, D

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Analysis of tandem III-V/SiGe devices grown on Si von Schmieder, K. J., Gerger, A., Diaz, M., Pulwin, Z., Ebert, C., Lochtefeld, A., Opila, R., Barnett, A.

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Optimization of MOCVD grown MQW structures for triple junction solar cells von Ebert, C., Pulwin, Z., Reynolds, C. L., Shahrjerdi, D., Rawdanowicz, T. A., Dyer, D., Lu, F.

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Analysis of high growth rate MOCVD structures by solar cell device measurements von Schmieder, K., Haughn, C., Pulwin, Z., Dyer, D., Mutitu, J., Doty, M., Ebert, C., Barnett, A.

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Optimization of InGaAs metamorphic buffers for triple junction solar cells von Ebert, C. W., Reynolds, C. L., Wellenius, P., Reynolds, J. G., Muth, J. F., Pulwin, Z., Lee, D., Lu, F., Dyer, D.

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