Low temperature GaAs grown by gas source molecular beam epitaxy von Droopad, R., Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Maracas, G.N.

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Electrical and optical characterization of gas source and solid source MBE low temperature buffers von Puechner, R.A., Johnson, D.A., Shiralagi, K.T., Gerber, D.S., Droopad, R., Maracas, G.N.

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Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures von Droopad, R., Puechner, R.A., Choi, K.Y., Shiralagi, K.T., Maracas, G.N.

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Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy von Shiralagi, K.T., Puechner, R.A., Choi, K.Y., Droopad, R., Maracas, G.N.

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h/e Periodicity of weak localization in semiconductor surface superlattices von Ma, Jun, Puechner, R.A., Liu, W.-P., Kriman, A.M., Maracas, G.N., Ferry, O.K.

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Magnetoconductance in lateral surface superlattices von Puechner, R.A., Ma, Jun, Mezenner, R., Liu, W.-P., Kriman, A.M., Maracas, G.N., Bernstein, G., Ferry, D.K., Chu, P., Wieder, H.H., Newman, P.

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Space charge currents, domains and instabilities viewed with voltage contrast spectroscopy von Maracas, G.N., Johnson, D.A., Puechner, R.A., Edwards, J.L., Myhajlenko, S., Goronkin, H., Tsui, R.

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Gas source molecular beam epitaxial growth and characterization of InP on GaAs von Droopad, R., Choi, K.Y., Shiralagi, K.T., Puechner, R.A., Maracas, G.N.

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