Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals von Andreev, B.A., Gavrilenko, L.V., Drozdov, Yu.N., Yunin, P.A., Pryakhin, D.A., Mochalov, L.A., Sennikov, P.G., Bulkin, P., Roca i Cabarrocas, P.

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Novel technique for monitoring of MOVPE processes von Volkov, P.V., Goryunov, A.V., Daniltsev, V.M., Luk’yanov, A.Yu, Pryakhin, D.A., Tertyshnik, A.D., Khrykin, O.I., Shashkin, V.I.

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Evidence of impurity assisted tunneling in SiGe/Si heterostructures von Kh, Zhukavin R, Bekin, N A, Lobanov, D N, Drozdov, M N, Drozdov, Yu N, Kozlov, D V, Pryakhin, D A, Shastin, V N, Shengurov, V G

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Social and ecological component of the sustainable development of region von Belik, I S, Pryakhin, D A

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Growth of BGaAs Layers on GaAs Substrates by Metal–Organic Vapor-Phase Epitaxy von Pryakhin, D. A.

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Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure von Zhukavin, R.Kh, Bekin, N.A., Lobanov, D.N., Drozdov, Yu.N., Yunin, P.A., Drozdov, M.N., Pryakhin, D.A., Chhalo, E.D., Kozlov, D.V., Novikov, A.V., Shastin, V.N.

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Social and ecological component of the sustainable development of region von Belik, I. S, Pryakhin, D. A.

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Effect of the Conditions of Metal–Organic Chemical-Vapor Epitaxy on the Properties of GaInAsN Epitaxial Films von Danil’tsev, V. M.

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Raman spectra of amorphous isotope-enriched 74Ge with low-strained Ge nanocrystals von ANDREEV, B. A, GAVRILENKO, L. V, DROZDOV, Yu. N, YUNIN, P. A, PRYAKHIN, D. A, MOCHALOV, L. A, SENNIKOV, P. G, BULKIN, P, I CABARROCAS, P. Roca

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Optical monitoring of substrate temperature and etching speed of multilayered structures during plasmochemical etching von Volkov, P. V., Goryunov, A. V., Lukyanov, A. U., Pryakhin, D. A., Tertyshnik, A. D., Shashkin, V. I.

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Production of nanocrystalline silicon layers using the plasma enhanced chemical vapor deposition from the gas phase of silicon tetrafluoride von Sennikov, P. G., Golubev, S. V., Shashkin, V. I., Pryakhin, D. A., Drozdov, M. N., Andreev, B. A., Drozdov, Yu. N., Kuznetsov, A. S., Pohl, H. -J.

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Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure von ZHUKAVIN, R. Kh, BEKIN, N. A, SHASTIN, V. N, LOBANOV, D. N, DROZDOV, Yu. N, YUNIN, P. A, DROZDOV, M. N, PRYAKHIN, D. A, CHHALO, E. D, KOZLOV, D. V, NOVIKOV, A. V

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Qualitative sims analysis of28,29,30Si isotope concentration in silicon using a Tof.Sims-5 Setup von Drozdov, M. N., Drozdov, Yu. N., Pryakhin, D. A., Shashkin, V. I., Sennikov, P. G., Pohl, H.-J.

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Fabrication of nanocrystalline silicon layers by plasma enhanced chemical vapor deposition from silicon tetrafluoride von Sennikov, P. G., Golubev, S. V., Shashkin, V. I., Pryakhin, D. A., Drozdov, M. N., Andreev, B. A., Drozdov, Yu. N., Kuznetsov, A. S., Pohl, H. -J.

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Isotope-modified silicon layers obtained by plasma enhanced chemical vapor deposition from gaseous silicon tetrafluoride von Sennikov, P. G., Golubev, S. V., Shashkin, V. I., Pryakhin, D. A., Drozdov, M. N., Andreev, B. A., Pohl, H. -J., Godisov, O. N.

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Fiber-optic equipment for monitoring technological processes von Volkov, P. V., Goryunov, A. V., Danil’tsev, V. M., Luk’yanov, A. Yu, Pryakhin, D. A., Tertyshnik, A. D., Khrykin, O. I., Shashkin, V. I.

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Towards 0.99999 28Si von SENNIKOV, P. G, VODOPYANOV, A. V, GODISOV, O. N, GLASUNOV, A. I, SAFONOV, A. Ju, POHL, H.-J, THEWALT, M. L. W, BECKER, P, RIEMANN, H, ABROSIMOV, N. V, VALKIERS, S, GOLUBEV, S. V, MANSFELD, D. A, DROZDOV, M. N, DROZDOV, Yu. N, ANDREEV, B. A, GAVRILENKO, L. V, PRYAKHIN, D. A, SHASHKIN, V. I

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Optical monitoring of technological parameters in metal-organic vapor-phase epitaxy von Volkov, P. V., Goryunov, A. V., Danil’tsev, V. M., Luk’yanov, A. Yu, Pryakhin, D. A., Tertyshnik, A. D., Khrykin, O. I., Shashkin, V. I.

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Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters von Aleshkin, V. Ya, Vostokov, N. V., Gaponova, D. M., Danil’tsev, V. M., Dubinov, A. A., Krasil’nik, Z. F., Korytin, A. I., Kuritsyn, D. I., Pryakhin, D. A., Shashkin, V. I.

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MOVPE of structures with aluminum nanocluster layers in a GaAs matrix von Vostokov, N. V., Danil’tsev, V. M., Drozdov, Yu. N., Pryakhin, D. A., Shashkin, V. I., Shuleshova, I. Yu

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