Some evidences of ordering in InGaP layers grown by liquid phase epitaxy von Prutskij, T.A, Dı́az-Arencibia, P, Mintairov, A, Merz, J, Kosel, T

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Micro-Raman Studies of AlxGa1-xP/GaP Graded Structures von Zamora, E., Díaz, P., Jiménez-Sandoval, S., González-Raña, C., Prutskij, T.A., Mishurni, V., Merkulov, A.

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Characterization of GaAs liquid-phase epitaxy layers grown in a BN boat von Prutskij, T.A., Ilinskii, A.I., Andrade, F.Silva, Chavez, F., Arencibia, P.Diaz

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GaP-AlGaP heterojunction photosensors with photosensitivity maximum at 380–420 nm von Prutskij, T.A., Andreev, V.M., Larionov, V.R.

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Investigation of LPE Ga1-xAlxAs/GaAs laser structures by double crystal diffractometry von BOCCHI, C, FERRARI, C, FRANZOSI, P, SCAFFARDI, M, DIAZ, P, RODRIGUEZ, J. G, PRUTSKIJ, T. A

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Investigation of LPE Ga 1− xAl xAs/GaAs laser structures by double crystal diffractometry von Bocchi, C., Ferrari, C., Franzosi, P., Scaffardi, M., Diaz, P., Rodriguez, J.G., Prutskij, T.A.

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