On the optimization of SiGe-base bipolar transistors von Hueting, R.J.E., Slotboom, J.W., Pruijmboom, A., de Boer, W.B., Timmering, C.E., Cowern, N.E.B.

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Parasitic energy barriers in SiGe HBTs von Slotboom, J.W., Streutker, G., Pruijmboom, A., Gravesteijn, D.J.

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Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy von Pruijmboom, A., Slotboom, J.W., Gravesteijn, D.J., Fredriksz, C.W., van Gorkum, A.A., van de Heuvel, R.A., van Rooij-Mulder, J.M.L., Streutker, G., van de Walle, G.F.A.

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Flux-flow resistivity in an artificial pinning structure von Pruijmboom, A., van der Drift, E., Kes, P.H.

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Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I-V characteristics von GRAVESTEIJN, D. J, PRUIJMBOOM, A, KERSTEN, W. J, VAN ROOIJ-MULDER, J. M. L, READER, A. H, SLOTBOOM, J

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Low-voltage high-performance silicon RF power transistors von Versleijen, M., Dekker, R., v.d. Einde, W., Pruijmboom, A.

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Optimization of the high-frequency performance of the BASIC bipolar technology von Dekker, R., van Es, R., Jansen, S., Kranen, P., Maas, H., Pruijmboom, A., van der Velden, J.

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Thermionic emission limited recombination in phosphorus-implanted polysilicon emitters von Streutker, G., Pruijmboom, A., Klaassen, D.B.M., Slotboom, J.W.

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18 ps ECL-gate delay in laterally scaled 30 GHz bipolar transistors von Pruijmboom, A., Timmering, C.E., Hageraats, J.J.E.M.

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BASIC II: a super self-aligned technology for high-performance bipolar applications von Pruijmboom, A., Jansen, A.C.L., Maas, H.G.R., Kranen, P.H., van Es, R.A., Dekker, R., van der Velden, J.W.A.

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Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems von Pruijmboom, A., Terpstra, D., Timmering, C.E., de Boer, W.B., Theunissen, M.J.J., Slotboom, J.W., Hueting, R.J.E., Hageraats, J.J.E.W.

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Molecular beam epitaxy grown Si/Si 0.87Ge 0.13 heterojunction bipolar transistors with ideal I–V characteristics von Gravesteijn, D.J., Pruijmboom, A., Kersten, W.J., van Rooij-Mulder, J.M.L., Reader, A.H., Slotboom, J.

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QUBiC3: a 0.5 /spl mu/m BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications von Pruijmboom, A., Szmyd, D., Brock, R., Wall, R., Morris, N., Keng Fong, Jovenin, F.

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MOLECULAR-BEAM EPITAXY GROWN SI/SI0.87GE0.13 HETEROJUNCTION BIPOLAR-TRANSISTORS WITH IDEAL IV CHARACTERISTICS von GRAVESTEIJN, DJ, PRUIJMBOOM, A, KERSTEN, WJ, VANROOIJMULDER, JML, READER, AH, SLOTBOOM, J

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A miniaturized VCSEL based sensor platform for velocity measurement von van der Lee, A., Carpaij, M., Monch, H., Schemmann, M., Pruijmboom, A.

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HETEROJUNCTION BIPOLAR-TRANSISTORS WITH SI(1-X)GE(X) BASE von PRUIJMBOOM, A, TIMMERING, CE, VANROOIJMULDER, JML, GRAVESTEIJN, DJ, DEBOER, WB, KERSTEN, WJ, SLOTBOOM, JW, VRIEZEMA, CJ, DEKRUIF, R

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Heterojunction bipolar transistors with Si 1− xGe x base von Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

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Heterojunction bipolar transistors with Si1−xGex base von Pruijmboom, A., Timmering, C.E., van Rooij-Mulder, J.M.L., Gravesteijn, D.J., de Boer, W.B., Kersten, W.J., Slotboom, J.W., Vriezema, C.J., de Kruif, R.

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On the Optimisation of SiGe-Base Bipolar Transistors von Hueting, R.J.E., Slotboom, J.W., Pruijmboom, A., de Boer, W.B., Timmering, C.E., Cowern, N.

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Heterojunction bipolar transistors with Si sub(1-x)Ge sub(x) base von Pruijmboom, A, Timmering, C E, van Rooij-Mulder, J M L, Gravesteijn, D J, de Boer, W B, Kersten, W J, Slotboom, J W, Vriezema, C J, de Kruif, R

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