Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography von Hoummada, K., Dahlem, F., Kociniewski, T., Boulmer, J., Dubois, C., Prudon, G., Bustarret, E., Courtois, H., Débarre, D., Mangelinck, D.

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Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers von Grockowiak, A., Klein, T., Cercellier, H., Lévy-Bertrand, F., Blase, X., Kačmarčik, J., Kociniewski, T., Chiodi, F., Débarre, D., Prudon, G., Dubois, C., Marcenat, C.

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Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers von Marcenat, C., Kačmarčík, J., Piquerel, R., Achatz, P., Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Bustarret, E., Ortega, L., Klein, T., Boulmer, J., Kociniewski, T., Débarre, D.

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Superconducting properties of laser annealed implanted Si:B epilayers von Grockowiak, A, Klein, T, Bustarret, E, Ka mar ík, J, Dubois, C, Prudon, G, Hoummada, K, Mangelinck, D, Kociniewski, T, Débarre, D, Boulmer, J, Marcenat, C

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SIMS quantification of thick Si1−x Gex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam von Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Graf, J. P., Le Gall, Y., Muller, D.

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Self-consistent isotopic comparative method used to determine dependence of secondary-ion yields on oxygen concentration in Si-O system up to 33 at von Dupuy, J. C., Prudon, G., Dubois, C., Kögler, R., Akhmadaliev, S., Perrat-Mabilon, A.

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Deconvolution of very low primary energy SIMS depth profiles von Fares, B., Gautier, B., Dupuy, J.C., Prudon, G., Holliger, P.

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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon von Fares, B., Gautier, B., Baboux, N., Prudon, G., Holliger, P., Dupuy, J.C.

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Ultra-low energy SIMS analysis of boron deltas in silicon von Baboux, N, Dupuy, J.C, Prudon, G, Holliger, P, Laugier, F, Papon, A.M, Hartmann, J.M

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Toward a better reliability in the deconvolution of SIMS depth profiles von Gautier, B., Prudon, G., Dupuy, J. C.

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Some examples of depth resolution in SIMS analysis von Prudon, G.

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Deconvolution of SIMS Depth Profiles of Boron in Silicon von Gautier, B., Prost, R., Prudon, G., Dupuy, J. C.

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Quantification of germanium and boron in heterostructures Si/Si1−xGex/Si by SIMS von Prudon, G, Gautier, B, Dupuy, J.C, Dubois, C, Bonneau, M, Delmas, J, Vallard, J.P, Bremond, G, Brenier, R

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SIMS quantification of thick Si1-xGex films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar+ beam von Prudon, G., Dubois, C., Gautier, B., Dupuy, J.C., Graf, J.P., Le Gall, Y., Muller, D.

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SIMS quantification of thick Si 1−x Ge x films (0 ≤ x ≤ 1) using the isotopic comparative method under Ar + beam von Prudon, G., Dubois, C., Gautier, B., Dupuy, J. C., Graf, J. P., Le Gall, Y., Muller, D.

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Effectiveness and Limits of the Deconvolution of SIMS Depth Profiles of Boron in Silicon von Gautier, B., Dupuy, J. C., Prost, R., Prudon, G.

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The isotopic comparative method (ICM) for SIMS quantification of boron in silicon up to 40 at. von Dubois, Christiane, Prudon, Gilles, Dupuy, Jean-Claude, Gautier, Brice, Canut, Bruno, Le Gall, Yann, Kociniewski, Thierry

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SIMS depth profile correction for the study of the first step of the diffusion of boron in silicon von Gautier, B., Dupuy, J.C., Semmache, B., Prudon, G.

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Surface roughening and erosion rate change at low energy SIMS depth profiling of silicon during oblique O 2 + bombardment von Fares, B., Gautier, B., Holliger, Ph, Baboux, N., Prudon, G., Dupuy, J.-Cl

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Imaging by atomic force microscopy of the electrical properties difference of the facets of oxygen-ion-induced ripple topography in silicon von Gautier, Brice, Fares, Boubker, Prudon, Gilles, Dupuy, Jean-Claude

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