Quantitative scanning spreading resistance microscopy on n-type dopant diffusion profiles in germanium and the origin of dopant deactivation von Prüßing, Jan K., Hamdana, Gerry, Bougeard, Dominique, Peiner, Erwin, Bracht, Hartmut

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Defect distribution in boron doped silicon nanostructures characterized by means of scanning spreading resistance microscopy von Prüßing, Jan K., Böckendorf, Tim, Hamdana, Gerry, Peiner, Erwin, Bracht, Hartmut

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Diffusion of boron in germanium at 800–900 °C revisited von Kipke, Felix, Südkamp, Tobias, Prüßing, Jan K., Bougeard, Dominique, Bracht, Hartmut

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Retarded boron and phosphorus diffusion in silicon nanopillars due to stress induced vacancy injection von Prüßing, Jan K., Böckendorf, Tim, Kipke, Felix, Xu, Jiushuai, Puranto, Prabowo, Lundsgaard Hansen, John, Bougeard, Dominique, Peiner, Erwin, Bracht, Hartmut

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Self-Holding Optical Actuator Based on a Mixed Ionic–Electronic Conductor Material von Muñoz-Castro, Marina, Walter, Nicolai, Prüßing, Jan K, Pernice, Wolfram, Bracht, Hartmut

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