Origins of Electrical Compensation in Si‐Doped HVPE GaN von Prozheev, Igor, Iwinska, Malgorzata, Sochacki, Tomasz, Bockowski, Michal, Bès, René, Tuomisto, Filip

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In-grown and irradiation-induced Al and N vacancies in 100 keV H+ implanted AlN single crystals von Prozheev, Igor, Heikkinen, Tanja, Makkonen, Ilja, Mizohata, Kenichiro, Tuomisto, Filip

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Effect of atomic layer annealing in plasma-enhanced atomic layer deposition of aluminum nitride on silicon von Seppänen, Heli, Prozheev, Igor, Kauppinen, Christoffer, Suihkonen, Sami, Mizohata, Kenichiro, Lipsanen, Harri

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Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration von Almogbel, Abdullah S., Zollner, Christian J., Saifaddin, Burhan K., Iza, Michael, Wang, Jianfeng, Yao, Yifan, Wang, Michael, Foronda, Humberto, Prozheev, Igor, Tuomisto, Filip, Albadri, Abdulrahman, Nakamura, Shuji, DenBaars, Steven P., Speck, James S.

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Electrical compensation and cation vacancies in Al rich Si-doped AlGaN von Prozheev, I., Mehnke, F., Wernicke, T., Kneissl, M., Tuomisto, F.

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Europium diffusion in ammonothermal gallium nitride von Jaroszynska, A., Grzanka, E., Grabowski, M., Staszczak, G., Prozheev, I., Jakiela, R., Tuomisto, F., Bockowski, M.

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Defects in layered boron nitride grown by Metal Organic Vapor Phase Epitaxy: luminescence and positron annihilation studies von Dąbrowska, Aleksandra K., Binder, Johannes, Prozheev, Igor, Tuomisto, Filip, Iwański, Jakub, Tokarczyk, Mateusz, Korona, Krzysztof P., Kowalski, Grzegorz, Stępniewski, Roman, Wysmołek, Andrzej

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Sn-doped n-type GaN layer with high electron density of 1020 cm−3 grown by halide vapor phase epitaxy von Hamasaki, Kansuke, Ohnishi, Kazuki, Nitta, Shugo, Fujimoto, Naoki, Watanabe, Hirotaka, Honda, Yoshio, Amano, Hiroshi

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Study of refractive index of human stomach cancer tissue in THz frequency range von Kuzikova, A V, Grigorev, R O, Kurasova, A P, Demchenko, P S, Senyuk, A V, Zakharenko, A A, Belolipetskaya, J R, Khamid, A H, Khodzitsky, M K

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Demonstration of Si-doped Al-rich regrown Al(Ga)N films on AlN/sapphire with >1015/cm3 carrier concentration using CCS-MOCVD reactor von Mukhopadhyay, Swarnav, Seshadri, Parthasarathy, Haque, Mobinul, Xie, Shuwen, Bai, Ruixin, Sanyal, Surjava, Wang, Guangying, Gupta, Chirag, Pasayat, Shubhra S.

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The Modeling Peculiarities of Diffractive Propagation of the Broadband Terahertz Two-dimensional Field von Balbekin, N.S., Kulya, M.S., Rogov, P.Yu, Petrov, N.V.

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Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition von Liu, Baiyin, Xu, Fujun, Wang, Jiaming, Lang, Jing, Wang, Liubing, Fang, Xuzhou, Yang, Xuelin, Kang, Xiangning, Wang, Xinqiang, Qin, Zhixin, Ge, Weikun, Shen, Bo

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Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates von Agrawal, Shivali, van Deurzen, Len, Encomendero, Jimy, Dill, Joseph E., Wei (Sheena) Huang, Hsin, Protasenko, Vladimir, Xing, Huili (Grace), Jena, Debdeep

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Milliwatt-power sub-230-nm AlGaN LEDs with >1500 h lifetime on a single-crystal AlN substrate with many quantum wells for effective carrier injection von Kobayashi, Hirotsugu, Sato, Kosuke, Okuaki, Yusuke, Lee, TaeGi, Morishita, Tomohiro, Goto, Hiromasa, Kuze, Naohiro

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10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN von Wang, Michael, Wu, Feng, Yao, Yifan, Zollner, Christian, Iza, Michael, Lam, Michael, DenBaars, Steven P., Nakamura, Shuji, Speck, James S.

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Vacancy Defects in Bulk and Quasi-Bulk GaN Crystals von Tuomisto, Filip

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Alkali metal ion-doped GaN for ultrafast electrochemical capacitor: Doping mechanism, structural adjustment, and structure–performance relationship von Zhu, Yuzhou, Zhou, Kai, Liu, Wanting, Fu, Weisheng, Zhang, Jinlin, Chen, Benkang, Jiang, Haihui, Liu, Libin, Gai, Ligang

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Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy von Qwah, Kai Shek, Farzana, Esmat, Wissel, Ashley, Monavarian, Morteza, Mates, Tom, Speck, James S.

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Enhancing Electronic and Magnetic Properties in Eu‐Doped GaN Nanowires via p‐f Hybridization of Eu‐Defect Complexes von Gudelli, Vijay Kumar, Aravindh S, Assa, Roqan, Iman S.

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Comprehensive Study of Electron Conduction and Its Compensation for Degenerate Si‐Doped AlN‐Rich AlGaN von Kataoka, Keita, Narita, Tetsuo, Yagi, Yusuke, Nagata, Kengo, Saito, Yoshiki

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