Modelling the response function of energy dispersive X-ray spectrometers with silicon detectors von Scholze, F., Procop, M.

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Check and Specification of the Performance of EDS Systems Attached to the SEM by Means of a New Test Material EDS-TM002 and an Updated Evaluation Software Package EDS Spectrometer... von Hodoroaba, V.-D., Procop, M., Rackwitz, V.

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Measurement of detection efficiency and response functions for an Si(Li) x-ray spectrometer in the range 0.1-5 keV von Scholze, F., Procop, M.

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Detection efficiency of energy-dispersive detectors with low-energy windows von Scholze, F., Procop, M.

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Determination of the real transmission of an x-ray lens for micro-focus XRF at the SEM by coupling measurement with calculation of scatter spectra von Hodoroaba, V.-D., Procop, M.

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Improvements of the low-energy performance of a micro-focus x-ray source for XRF analysis with the SEM von Procop, M., Hodoroaba, V.-D., Bjeoumikhov, A., Wedell, R., Warrikhoff, A.

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Estimation of absorbing layer thicknesses for an Si(Li) detector von Procop, M.

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Electron probe microanalysis (EPMA) measurement of thin-film thickness in the nanometre range von Procop, M, Radtke, M, Krumrey, M, Hasche, K, Schädlich, S, Frank, W

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Realisation and metrological characterisation of thickness standards below 100 nm von Thomsen-Schmidt, P., Hasche, K., Ulm, G., Herrmann, K., Krumrey, M., Ade, G., St mpel, J., Busch, I., Sch dlich, S., Schindler, A., Frank, W., Hirsch, D., Procop, M., Beck, U.

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A new microfocus x-ray source, iMOXS, for highly sensitive XRF analysis in scanning electron microscopes von Bjeoumikhov, A., Arkadiev, V., Eggert, F., Hodoroaba, V.-D., Langhoff, N., Procop, M., Rabe, J., Wedell, R.

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HIV and Mycobacteria von Procop, Gary W., MD, MS

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An interlaboratory comparison of energy dispersive X-ray microanalysis (EDX) of titanium and zirkonium nitrides von PROCOP, M, RÖDER, A

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Interdiffusion in InGaAs/GaAs and InGaAs/GaAsP quantum wells von Oster, A., Bugge, F., Gramlich, S., Procop, M., Zeimer, U., Weyers, M.

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AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique von Procop, M., Klein, A., Rechenberg, I., Krüger, D.

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XPS data for sputter-cleaned In0.53Ga0.47As, GaAs, and InAs surfaces von PROCOP, M

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Effect of growth temperature on performance of AlGaAs/InGaAs/GaAs QW laser diodes von BUGGE, F, ERBERT, G, PROCOP, M, RECHENBERG, I, ZEIMER, U, WEYERS, M

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EDXTOOLS — Computer Programmes for the Determination of Critical EDX Spectrometer Parameters von Procop, Mathias

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The influence of the storage time and the deposition of SiO2 on the properties of H2SO4 etched (In,Ga)As surface layers investigated by XPS and ellipsometry von Wandel, K, Procop, M, Richter, U, Wolf, R

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Ion beam effects on the surface and near-surface composition of TaSi2 von Valeri, S., di Bona, A., Ottaviani, G., Procop, M.

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Photoelectron spectroscopic and ellipsometric investigation of In0.53Ga0.47As surfaces after wet chemical etching von PROCOP, M, WANDEL, K

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