A WAY TO IMPROVE THE ACCURACY OF DISPLACEMENT MEASUREMENT BY A TWO-PROBE IMPLEMENTATION OF MICROWAVE INTERFEROMETRY von Doronin, Aleksei V, Gorev, Nikolai B, Kodzhespirova, Inna F, Privalov, Evgeny N

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Photocapacitance of GaAs thin-film epitaxial structures von Gorev, Nikolai B., Kodzhespirova, Inna F., Privalov, Evgeny N., Khuchua, Nina, Khvedelidze, Levan, Shur, Michael S.

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Determination of deep trap concentration at channel–substrate interface in GaAs MESFET using sidegating measurements von Khuchua, Nina P, Khvedelidze, Levan V, Gorev, Nikolai B, Privalov, Evgeny N, Shur, Michael S

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DISPLACEMENT MEASUREMENT USING A TWO-PROBE IMPLEMENTATION OF MICROWAVE INTERFEROMETRY von Doronin, Aleksei V., Gorev, Nikolai B., Kodzhespirova, Inna F., Privalov, Evgeny N.

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Non-destructive deep trap diagnostics of epitaxial structures von Gorev, Nikolai B., Kodzhespirova, Inna, Privalov, Evgeny N., Khvedelidze, Levan, Khuchua, Nina, Peradze, Giorgi G., Shur, Michael S., Stevens, Kevin

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Photocapacitance of GaAs thin-film structures fabricated on a semi-insulating compensated substrate von Gorev, N.B., Kodzhespirova, I.F., Privalov, E.N., Khuchua, N., Khvedelidze, L., Shur, M.S.

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Effect of backgating on the field distribution in planar thin-film GaAs structures von Gorev, Nikolai B., Kodzhespirova, Inna F., Kovalenko, Yury A., Privalov, Evgeny N., Prokhorov, Eugenio F.

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PHOTOCAPACITANCE OF GaAs THIN-FILM STRUCTURES FABRICATED ON A SEMI-INSULATING COMPENSATED SUBSTRATE von GOREV, NIKOLAI B., KODZHESPIROVA, INNA F., PRIVALOV, EVGENY N., KHUCHUA, NINA, KHVEDELIDZE, LEVAN, SHUR, MICHAEL S.

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Isobutylaluminum aryloxides as metallocene activators in Homo- and copolymerization of olefins von Faingol'd, Evgeny E., Bravaya, Natalia M., Panin, Andrei N., Babkina, Olga N., Saratovskikh, Stanislav L., Privalov, Victor I.

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