Influence of silicon nanocrystal size and density on the performance of non-volatile memory arrays von Rao, R.A., Gasquet, H.P., Steimle, R.F., Rinkenberger, G., Straub, S., Muralidhar, R., Anderson, S.G.H., Yater, J.A., Ledezma, J.C., Hamilton, J., Acred, B., Swift, C.T., Hradsky, B., Peschke, J., Sadd, M., Prinz, E.J., Chang, K.M., White, B.E.

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Silicon nanocrystal based memory devices for NVM and DRAM applications von Rao, R.A, Steimle, R.F, Sadd, M, Swift, C.T, Hradsky, B, Straub, S, Merchant, T, Stoker, M, Anderson, S.G.H, Rossow, M, Yater, J, Acred, B, Harber, K, Prinz, E.J, White, B.E, Muralidhar, R

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Silicon nanocrystal non-volatile memory for embedded memory scaling von Steimle, R.F., Muralidhar, R., Rao, R., Sadd, M., Swift, C.T., Yater, J., Hradsky, B., Straub, S., Gasquet, H., Vishnubhotla, L., Prinz, E.J., Merchant, T., Acred, B., Chang, K., White, B.E.

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A model for the channel potential of charge-trapping memories and its implications for device scaling von Sadd, M., Anderson, S.G.H., Hradsky, B., Muralidhar, R., Prinz, E.J., Rao, R., Straub, S., Steimle, R.F., Swift, C.T., White, B.E., Yater, J.A.

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High quantum efficiency photoluminescence from localized excitons in Si1-xGex von LENCHYSHYN, L. C, THEWALT, M. L. W, STURM, J. C, SCHWARTZ, P. V, PRINZ, E. J, ROWELL, N. L, NOËL, J.-P, HOUGHTON, D. C

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Current gain-Early voltage products in heterojunction bipolar transistors with nonuniform base bandgaps von Prinz, E.J., Sturm, J.C.

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Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors von MATUTINOVIC-KRSTELJ, Z, PRINZ, E. J, SCHWARTZ, P. V, STURM, J. C

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Band-gap shifts in silicon-germanium heterojunction bipolar transistors von STURM, J. C, PRINZ, E. J, GARONE, P. M, SCHWARTZ, P. V

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The effects of base dopant outdiffusion and undoped Si1-xGex junction spacer layers in Si/Si1-xGex/Si heterojunction bipolar transistors von PRINZ, E. J, GARONE, P. M, SCHWARTZ, P. V, XIAO, X, STURM, J. C

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Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics von STURM, J. C, PRINZ, E. J, MAGEE, C. W

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An embedded 90nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase von SWIFT, C. T, CHINDALORE, G. L, HARBER, K, HARP, T. S, HOEFLER, A, HONG, C. M, INGERSOLL, P. A, LI, C. B, PRINZ, E. J, YATER, J. A

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Nanocrystal physical attributes influencing non-volatile memory performance von Hradsky, B., Muralidhar, R., Rao, R.A., Steimle, B., Straub, S., White, B.E., Sadd, M., Anderson, S.G.H., Yater, J.A., Swift, C.T., Acred, B., Peschke, J., Prinz, E.J., Chang, K.M.

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An embedded silicon nanocrystal nonvolatile memory for the 90nm technology node operating at 6V von Muralidhar, R., Steimle, R.F., Sadd, M., Rao, R., Swift, C.T., Prinz, E.J., Yater, J., Grieve, L., Harber, K., Hradsky, B., Straub, S., Acred, B., Paulson, W., Chen, W., Parker, L., Anderson, S.G.H., Rossow, M., Merchant, T., Paransky, M., Huynh, T., Hadad, D., Ko-Min Chang, White, B.E.

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Current gain-Early voltage products in graded-base Si/Si(1-x )Ge(x)/Si heterojunction bipolar transistors von Prinz, E J, Sturm, J C

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Base resistance and effective bandgap reduction in n-p-nSi/Si(1-x)Ge(x)/Si HBTs with heavy base doping von Matutinovic-Krstelj, Z, Venkataraman, V, Prinz, E J, Sturm, J C, Magee, C W

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An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase von Swift, C.T., Chindalore, G.L., Harber, K., Harp, T.S., Hoefler, A., Hong, C.M., Ingersoll, P.A., Li, C.B., Prinz, E.J., Yater, J.A.

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Graded-base Si/Si(1-x)Ge(x)/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics von Sturm, J C, Prinz, E J, Magee, C W

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Graded-base Si/Si(1-x)Ge(x)/Si heterojunctionbipolar transistors grown by rapid thermal chemical vapor depositionwith near-ideal electrical characteristics von Sturm, J C, Prinz, E J, Magee, C W

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A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic von Prinz, E.J., Xiao, X., Schwartz, P.V., Sturm, J.C.

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Graded-base Si/Si sub(1-x)Ge sub(x)/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics von Sturm, J C, Prinz, E J, Magee, C W

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