Electro-Thermal Analysis and Optimisation of Edge Termination of Power Diode Supported by 2-D/3-D Numerical Modelling and Simulation von Príbytný, P, Donoval, D, Chvála, A, Marek, J, Molnár, M

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Three-Dimensional Electro-Thermal Verilog-A Model of Power MOSFET for Circuit Simulation von Chvála, A, Donoval, D, Marek, J, Príbytný, P, Molnár, M, Mikolášek, M

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Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation von Chvala, A., Donoval, D., Beno, P., Marek, J., Pribytny, P., Molnar, M.

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Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation von Pribytny, P., Donoval, D., Chvala, A., Marek, J., Molnar, M.

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Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors von MOLNAR, M, DONOVAL, D, KUZMIK, J, MAREK, J, CHVALA, A, PRIBYTNY, P, MIKOLASEK, M, RENDEK, K, PALANKOVSKI, V

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Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation von Chvala, A., Donoval, D., Marek, J., Pribytny, P., Molnar, M.

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2/3-D circuit electro-thermal model of power MOSFET for SPICE-like simulation von Chvala, A., Donoval, D., Marek, J., Pribytny, P., Molnar, M.

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Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs von Chvala, Ales, Donoval, Daniel, Satka, Alexander, Molnar, Marian, Marek, Juraj, Pribytny, Patrik

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Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation von Chvála, Aleš, Marek, Juraj, Príbytný, Patrik, Šatka, Alexander, Stoffels, Steve, Posthuma, Niels, Decoutere, Stefaan, Donoval, Daniel

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Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells von MIKOLASEK, Miroslav, PRIBYTNY, Patrik, DONOVAL, Daniel, MAREK, Juraj, CHVALA, Aleš, MOLNAR, Marian, KOVAC, Jaroslav

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Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction von Chvala, Ales, Donoval, Daniel, Marek, Juraj, Pribytny, Patrik, Molnar, Marian, Mikolasek, Miroslav

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Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations von Marek, Juraj, Chvála, Aleš, Donoval, Daniel, Príbytný, Patrik, Molnár, Marián, Mikolášek, Miroslav

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TCAD simulation of a breakdown-enhanced double channel GaN metal-insulator-semiconductor field-effect transistor with a P-buried layer von Fei, Xin-Xing, Wang, Ying, Luo, Xin, Bao, Meng-Tian, Yu, Cheng-Hao

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Device Design Assessment of GaN Merged P-i-N Schottky Diodes von Zhang, Yuliang, Lu, Xing, Zou, Xinbo

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Electrothermal Simulation-Based Comparison of 4H-SiC p-i-n, Schottky, and JBS Diodes Under High Current Density Pulsed Operation von Pushpakaran, Bejoy N., Bayne, Stephen B., Ogunniyi, Aderinto A.

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SIMSCAPE electro-thermal modelling of the PIN diode for power circuits simulation von Mijlad, Naoual, Elwarraki, Elmostafa, Elbacha, Abdelhadi

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An analytical approach for modeling of high-efficiency crystalline silicon solar cells with homo–hetero junctions von Bashiri, Hadi, Karami, Mohammad Azim, Nejad, Shahram Mohammad

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Investigation of electron trapping in AlGaN/GaN HEMT with Fe-doped buffer through DCT characterization and TCAD device simulations von Bouslama, Mohamed, Raja, P. Vigneshwara, Gaillard, Florent, Sommet, Raphael, Nallatamby, Jean-Christophe

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Influence Analysis of Back-Barrier and AIN Substrate on the High-Temperature Performance of an E-Mode Mg-Doped In0.2Ga0.8N Capped Gate High Electron Mobility Transistor for High-Po... von Tarauni, Yusuf U., Thiruvadigal, D. J., Hotoro, Maitama, Koki, Fatima Salmanu, Murugapandiyan, P.

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(Invited) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests von Zhang, Ruizhe, Kozak, Joseph, Liu, Jingcun, Zhang, Yuhao

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