Performance improvement mechanisms of pyramid-like via hole recessed GaAs-based solar cells grown on Si wafer von Tseng, Chun-Yen, Lee, Ching-Ting, Pchelyakov, Oleg P., Preobrazhenskii, Valerii V.

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A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth von Putyato, Mikhail A, Preobrazhenskii, Valerii V, Semyagin, Boris R, Fëklin, Dima F, Pakhanov, Nikolai A, Emelianov, Eugene A, Chikichev, Sergei I

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Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs von Kosarev, Alexander, Bert, Nikolay, Nevedomskii, Vladimir, Chaldyshev, Vladimir, Preobrazhenskii, Valerii, Putyato, Mikhail, Semyagin, Boris

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Free-Standing InAs/InGaAs Microtubes and Microspirals on InAs (100) von Vorob'ev, Alexander, Prinz, Victor, Preobrazhenskii, Valerii, Semyagin, Boris

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A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth von PUTYATO, Mikhail A, PREOBRAZHENSKII, Valerii V, SEMYAGIN, Boris R, FËKLIN, Dima F, PAKHANOV, Nikolai A, EMELIANOV, Eugene A, CHIKICHEV, Sergei I

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Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice von Emelyanov, Eugene A., Putyato, Mikhail A., Semyagin, Boris R., Feklin, Dmitrii F., Preobrazhenskii, Valerii V.

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GaAs MBE on vicinal substrates Si(001): Impact of nucleation and growth conditions on surface morphology and crystallographic properties of the epitaxial layers von Petrushkov, Mikhail O., Putyato, Mikhail A., Semyagin, Boris R., Emelyanov, Eugene A., Feklin, Dmitry F., Preobrazhenskii, Valerii V.

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