“Just Right”: The Goldilocks Theory of Sanctions Busting’s Causes von Preble, Keith A

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Going Fishing versus Hunting Whales: Explaining Changes in How the US Enforces Economic Sanctions von Early, Bryan R., Preble, Keith A.

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Enforcing economic sanctions by tarnishing corporate reputations von Preble, Keith A., Early, Bryan R.

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The Impact of External Pressure on Companies’ Responses to Sanctions – an International Comparative Study von Stępień, Beata, Early, Bryan R., Grauvogel, Julia, Preble, Keith A., Truskolaski, Szymon

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Trading with Pariahs: North Korean Sanctions and the Challenge of Weaponized Interdependence von Preble, Keith A, Willis, Charmaine N

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Enforcing US Economic Sanctions: Why Whale Hunting Works von Early, Bryan R., Preble, Keith A.

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Replication Data for: 'Just Right': The Goldilocks Theory of Sanction Busting's Causes von Preble, Keith

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Enforcing Economic Sanctions by Tarnishing Corporate Reputations von Preble, Keith, Early, Bryan R.

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OFAC Enforcement Action Data Set von Preble, Keith, Early, Bryan R

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OFAC Civil Penalties and Enforcement Actions (2003-2019) von Early, Bryan R., Preble, Keith A.

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Fabrication and device characteristics of Schottky-type bulk GaN-based "visible-blind" ultraviolet photodetectors von Zhou, Yi, Ahyi, Claude, Tin, Chin-Che, Williams, John, Park, Minseo, Kim, Dong-Joo, Cheng, An-Jen, Wang, Dake, Hanser, Andrew, Preble, Edward A., Williams, N. Mark, Evans, Keith

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Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates von Liu, Fang, Huang, Li, Kamaladasa, Ranga, Picard, Yoosuf N., Preble, Edward A., Paskova, Tanya, Evans, Keith R., Davis, Robert F., Porter, Lisa M.

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High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates von Meyer, D. J., Deen, D. A., Storm, D. F., Ancona, M. G., Katzer, D. S., Bass, R., Roussos, J. A., Downey, B. P., Binari, S. C., Gougousi, T., Paskova, T., Preble, E. A., Evans, K. R.

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Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate von Wang, Yaqi, Alur, Siddharth, Sharma, Yogesh, Tong, Fei, Thapa, Resham, Gartland, Patrick, Issacs-Smith, Tamara, Ahyi, Claude, Williams, John, Park, Minseo, Johnson, Mark, Paskova, Tanya, Preble, Edward A, Evans, Keith R

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Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates von Huang, Li, Liu, Fang, Zhu, Jingxi, Kamaladasa, Ranga, Preble, Edward A., Paskova, Tanya, Evans, Keith, Porter, Lisa, Picard, Yoosuf N., Davis, Robert F.

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Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substrate von Zhou, Yi, Ahyi, Claude, Isaacs-Smith, Tamara, Bozack, Michael, Tin, Chin-Che, Williams, John, Park, Minseo, Cheng, An-jen, Park, Jung-Hyun, Kim, Dong-Joo, Wang, Dake, Preble, Edward A., Hanser, Andrew, Evans, Keith

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Composition and interface analysis of InGaN/GaN multiquantum-wells on GaN substrates using atom probe tomography von Liu, Fang, Huang, Li, Davis, Robert F., Porter, Lisa M., Schreiber, Daniel K., Kuchibatla, Satyanarayana V. N. T., Shutthanandan, Vaithiyalingam, Thevuthasan, Suntharampillai, Preble, Edward A., Paskova, Tania, Evans, Keith R.

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In Situ Raman Analysis of a Bulk GaN-Based Schottky Rectifier Under Operation von Xu, Hui, Alur, Siddharth, Wang, Yaqi, Cheng, An-Jen, Kang, Kilho, Sharma, Yogeshkumar, Park, Minseo, Ahyi, Claude, Williams, John, Gu, Chaokang, Hanser, Andrew, Paskova, Tanya, Preble, Edward A., Evans, Keith R., Zhou, Yi

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Electrical characteristics of the vertical GaN rectifiers fabricated on bulk GaN wafer von Wang, Yaqi, Xu, Hui, Alur, Siddharth, Sharma, Yogesh, Tong, Fei, Gartland, Patrick, Issacs-Smith, Tamara, Ahyi, Claude, Williams, John, Park, Minseo, Wheeler, Ginger, Johnson, Mark, Allerman, Andrew A., Hanser, Andrew, Paskova, Tanya, Preble, Edward A., Evans, Keith R.

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AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates von Dongwon Yoo, Dongwon Yoo, Limb, J, Jae-Hyun Ryou, Jae-Hyun Ryou, Yun Zhang, Yun Zhang, Shyh-Chiang Shen, Shyh-Chiang Shen, Dupuis, R.D, Hanser, D, Preble, E, Evans, K

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