Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe2 Schottky Barrier Transistors von Prakash, Abhijith, Appenzeller, Joerg

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Toward Low-Power Electronics: Tunneling Phenomena in Transition Metal Dichalcogenides von Das, Saptarshi, Prakash, Abhijith, Salazar, Ramon, Appenzeller, Joerg

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Understanding contact gating in Schottky barrier transistors from 2D channels von Prakash, Abhijith, Ilatikhameneh, Hesameddin, Wu, Peng, Appenzeller, Joerg

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Climate change adaptation in the Australian electricity sector and the lure of resilience thinking von Adams, Sophie, Prakash, Abhijith

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Insights on designing effective and efficient frequency control arrangements from the Australian National Electricity Market von Prakash, Abhijith, Bruce, Anna, MacGill, Iain

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Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe sub(2) Schottky Barrier Transistors von Prakash, Abhijith, Appenzeller, Joerg

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Bandgap Extraction and Device Analysis of Ionic Liquid Gated WSe 2 Schottky Barrier Transistors von Prakash, Abhijith, Appenzeller, Joerg

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Quantifying reserve capabilities for designing flexible electricity markets: An Australian case study with increasing penetrations of renewables von Prakash, Abhijith, Ashby, Rohan, Bruce, Anna, MacGill, Iain

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Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure von Azcatl, Angelica, Qin, Xiaoye, Prakash, Abhijith, Zhang, Chenxi, Cheng, Lanxia, Wang, Qingxiao, Lu, Ning, Kim, Moon J, Kim, Jiyoung, Cho, Kyeongjae, Addou, Rafik, Hinkle, Christopher L, Appenzeller, Joerg, Wallace, Robert M

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Balance of Power: Designing operational practices for balancing electricity markets with growing penetrations of renewable energy von Prakash, Abhijith

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NEMSEER: A Python package for downloading and handling historical National Electricity Market forecast data produced by the Australian Energy Market Operator von Prakash, Abhijith, Bruce, Anna, MacGill, Iain

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Low-frequency noise in MoSe2 field effect transistors von Das, Suprem R., Kwon, Jiseok, Prakash, Abhijith, Delker, Collin J., Das, Saptarshi, Janes, David B.

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Correlating Electronic Transport and 1/ f Noise in Mo Se 2 Field-Effect Transistors von Kwon, Jiseok, Prakash, Abhijith, Das, Suprem R., Janes, David B.

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Multivariable Load Prediction Using LSTM von Rohan, G. Satya, Sailaja, V., Deepa, K., Prakash, Abhijith

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Covalent Nitrogen Doping and Compressive Strain in MoS 2 by Remote N 2 Plasma Exposure von Azcatl, Angelica, Qin, Xiaoye, Prakash, Abhijith, Zhang, Chenxi, Cheng, Lanxia, Wang, Qingxiao, Lu, Ning, Kim, Moon J., Kim, Jiyoung, Cho, Kyeongjae, Addou, Rafik, Hinkle, Christopher L., Appenzeller, Joerg, Wallace, Robert M.

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READ OPERATION OR WORD LINE VOLTAGE REFRESH OPERATION IN MEMORY DEVICE WITH REDUCED PEAK CURRENT von Prakash, Abhijith

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Read operation or word line voltage refresh operation in memory device with reduced peak current von Prakash, Abhijith

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Low-frequency noise in MoSe{sub 2} field effect transistors von Das, Suprem R., Kwon, Jiseok, Prakash, Abhijith, Janes, David B., Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, Delker, Collin J., Das, Saptarshi, Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439

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CONTROL GATE SIGNAL FOR DATA RETENTION IN NONVOLATILE MEMORY von Prakash, Abhijith, Khandelwal, Anubhav

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PLANE AND BLOCK LOCATION DEPENDENT VOLTAGE BIASES IN NAND MEMORY von Prakash, Abhijith, Yang, Xiang

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