Treffer 1 - 4 von 4 für Suche 'Prakash, APGnana', Suchdauer: 0,47s Treffer weiter einschränken
  1. 1
    Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors

    Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors von Prakash, A. P. Gnana


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  2. 2
    Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments

    Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments von Praveen, K.C., Pushpa, N., Prabakara Rao, Y.P., Govindaraj, G., Cressler, John D., Gnana Prakash, A.P.

    Veröffentlicht in Solid-state electronics

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  3. 3
    An analysis of 100 MeV F super(8+) ion and 50 MeV Li super(3+) ion irradiation effects on silicon NPN rf power transistors

    An analysis of 100 MeV F super(8+) ion and 50 MeV Li super(3+) ion irradiation effects on silicon NPN rf power transistors von Pushpa, N, Praveen, K C, Prakash, APGnana, Rao, YPPrabhakara, Tripati, Ambuj, Revannasiddaiah, D


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  4. 4
    A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors

    A comparison of lower and higher LET heavy ion irradiation effects on silicon NPN rf power transistors von Bharathi, M.N., Pushpa, N., Vinayakprasanna, N.H., Prakash, A.P. Gnana


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