Demonstration of Nanosecond Operation in Stochastic Magnetic Tunnel Junctions von Safranski, Christopher, Kaiser, Jan, Trouilloud, Philip, Hashemi, Pouya, Hu, Guohan, Sun, Jonathan Z

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Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth von Kim, Meekyung, Hashemi, Pouya, Hoyt, Judy L.

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Three-dimensional monolithic integration of III-V and Si(Ge) FETs for hybrid CMOS and beyond von Deshpande, Veeresh, Djara, Vladimir, O Connor, Eamon, Hashemi, Pouya, Morf, Thomas, Balakrishnan, Karthik, Caimi, Daniele, Sousa, Marilyne, Fompeyrine, Jean, Czornomaz, Lukas

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Demonstration of Symmetric Lateral NPN Transistors on SOI Featuring Epitaxially Grown Emitter/Collector Regions von Hashemi, Pouya, Yau, Jeng-Bang, Chan, Kevin K., Ning, Tak H., Shahidi, Ghavam G.

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(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges von Hashemi, Pouya, Balakrishnan, Karthik, Ott, John A., Leobandung, Effendi, Mo, Renee T., Park, Dae-Gyu

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Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells von Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.

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High Mobility High-Ge-Content SiGe PMOSFETs Using Al2O3/HfO2 Stacks With In-Situ O3 Treatment von Ando, Takashi, Hashemi, Pouya, Bruley, John, Rozen, John, Ogawa, Yohei, Koswatta, Siyuranga, Chan, Kevin K., Cartier, Eduard A., Mo, Renee, Narayanan, Vijay

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Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications von Safranski, Christopher, Hu, Guohan, Sun, Jonathan Z., Hashemi, Pouya, Brown, Stephen L., Buzi, Luxherta, D'Emic, Christopher P., Edwards, Eric R. J., Galligan, Eileen, Gottwald, Matthias G., Gunawan, Oki, Karimeddiny, Saba, Jung, Hyunsung, Kim, Juhyun, Latzko, Ken, Trouilloud, Philip L., Worledge, Daniel C.

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Easy-plane dominant stochastic magnetic tunnel junction with synthetic antiferromagnetic layers von Sun, Jonathan Z., Safranski, Christopher, Trouilloud, Philip, D'Emic, Christopher, Hashemi, Pouya, Hu, Guohan

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High Hole-Mobility Strained-Ge/Si0.6Ge0.4 P-MOSFETs With High-K/Metal Gate: , Role of Strained-Si Cap Thickness von HASHEMI, Pouya, HOYT, Judy L

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Stochastic magnetic tunnel junction with easy-plane dominant anisotropy von Sun, Jonathan Z., Safranski, Christopher, Trouilloud, Philip, D'Emic, Christopher, Hashemi, Pouya, Hu, Guohan

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High Hole-Mobility Strained- hbox Ge / Si 0.6 hbox Ge 0.4 P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness von Hashemi, Pouya, Hoyt, Judy L

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High Hole-Mobility Strained-[Formula Omitted] P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness von Hashemi, Pouya, Hoyt, Judy L

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Corrigendum to “Thin-film Si^sub 1-x^Ge^sub x^ HIT solar cells” [Solar Energy 103 (2014) 154–159] von Hadi, Sabina Abdul, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L

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Corrigendum to “Thin-film Si1−xGex HIT solar cells” [Solar Energy 103 (2014) 154–159] von Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.

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Thin-film Si1−xGex HIT solar cells von Abdul Hadi, Sabina, Hashemi, Pouya, DiLello, Nicole, Polyzoeva, Evelina, Nayfeh, Ammar, Hoyt, Judy L.

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Nouveautés dans la prise en charge des céphalées von Della Vedova, Ludovico, Hashemi, Pouya, Meynard-Colomb, Anne, Kleinschmidt, Andreas, Arsever, Sara

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Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs von Hashemi, Pouya, Canonico, Michael, Yang, Joel K.W., Gomez, Leonardo, Berggren, Karl K., Hoyt, Judy

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Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs von Gomez, L., Hashemi, P., Hoyt, J.L.

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Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter von Hashemi, P., Gomez, L., Hoyt, J.L.

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