InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates von Waldron, Niamh, Merckling, Clement, Teugels, Lieve, Ong, Patrick, Ibrahim, Sheik Ansar Usman, Sebaai, Farid, Pourghaderi, Ali, Barla, Kathy, Collaert, Nadine, Thean, Aaron Voon-Yew

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Ballisticity Saturation by Unscalable Reflections von Pourghaderi, M. Ali, Ilatikhameneh, Hesameddin, Pham, Anh-Tuan, Park, Hong-Hyun, Lim, Jinyoung, Jiang, Zhengping, Wang, Jing, Jin, Seonghoon, Kim, Jongchol, Kwon, Uihui, Chung, Won-Young, Choi, Woosung, Kim, Dae Sin

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Critical Backscattering Length in Nanotransistors von Pourghaderi, M. Ali, Pham, Anh-Tuan, Park, Hong-Hyun, Jin, Seonghoon, Vuttivorakulchai, Kantawong, Park, Yonghee, Kwon, Uihui, Choi, Woosung, Kim, Dae Sin

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Universality of Short-Channel Effects on Ultrascaled MOSFET Performance von Pourghaderi, M. Ali, Pham, Anh-Tuan, Ilatikhameneh, Hesameddin, Kim, Jongchol, Park, Hong-Hyun, Jin, Seonghoon, Chung, Won-Young, Choi, Woosung, Maeda, Shigenobu, Lee, Keun-Ho

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Comprehensive Simulation Study of Direct Source-to-Drain Tunneling in Ultra-Scaled Si, Ge, and III-V DG-FETs von Zhengping Jiang, Jing Wang, Hong-Hyun Park, Anh-Tuan Pham, Nuo Xu, Yang Lu, Seonghoon Jin, Woosung Choi, Pourghaderi, Mohammad Ali, Jongchol Kim, Keun-Ho Lee

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The influence of post-etch InGaAs fin profile on electrical performance von Ivanov, Tsvetan, Pourghaderi, Mohammad Ali, Lin, Dennis, Yu, Jen-Kan, Tan, Samantha, Kimura, Yoshie, Hellin, David, Geypen, Jeffrey, Bender, Hugo, Vertommen, Johan, Kamarthy, Gowri, Collaert, Nadine, Marks, Jef, Vahedi, Vahid, Arghavani, Reza, Thean, Aaron

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General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors von Pourghaderi, M. Ali, Magnus, Wim, Sorée, Bart, De Meyer, Kristin, Meuris, Marc, Heyns, Marc

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Surface scattering impact on Si/TiSi2 contact resistance von Vuttivorakulchai, Kantawong, Pourghaderi, Mohammad Ali, Kim, Gwang-Jun, Song, Seunghyun, Kim, Yoon-Suk, Kwon, Uihui, Kim, Dae Sin

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Tunneling-lifetime model for metal-oxide-semiconductor structures von Pourghaderi, M. Ali, Magnus, Wim, Sorée, Bart, Meuris, Marc, De Meyer, Kristin, Heyns, Marc

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Ballistic current in metal-oxide-semiconductor field-effect transistors: The role of device topology von Pourghaderi, M. Ali, Magnus, Wim, Sorée, Bart, Meuris, Marc, De Meyer, Kristin, Heyns, Marc

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Semiconductor heterostructure field effect transistor and method for making thereof von Soree, Bart, Pourghaderi, Mohammad Ali

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Multi-gate tunnel field-effect transistor (TFET) von MOHAMMAD ALI, POURGHADERI, ALIREZA, ALIAN

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Multi-gate tunnel field-effect transistor (TFET) von Pourghaderi Mohammad Ali, Alian AliReza

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MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET) von Alian, AliReza, Pourghaderi, Mohammad Ali

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MULTI-GATE TUNNEL FIELD-EFFECT TRANSISTOR (TFET) von Pourghaderi Mohammad Ali, Alian AliReza

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Semiconductor heterostructure field effect transistor and method for making thereof von POURGHADERI MOHAMMAD ALI, SOREE BART

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Carrier Transport in Nanoscale Transistors (Ladingtransport in nanotransistoren) von Pourghaderi, Mohammad Ali

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SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTOR AND METHOD FOR MAKING THEREOF von POURGHADERI MOHAMMAD ALI, SOREE BART

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Semiconductor heterostructure field effect transistor and method for making thereof von POURGHADERI, MOHAMMAD ALI, SOREE, BART

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Dielectric separation of partial GAA FETs von Sengupta, Rwik, Rodder, Mark S, Pourghaderi, Mohammad Ali, Obradovic, Borna J, Palle, Dharmendar

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