The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM von Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Potter, R. J., Guo, Y., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Robertson, J., Hall, S., Chalker, P. R.

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Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobili... von Partida-Manzanera, T., Zaidi, Z. H., Roberts, J. W., Dolmanan, S. B., Lee, K. B., Houston, P. A., Chalker, P. R., Tripathy, S., Potter, R. J.

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Durable pulmonary vein isolation with optimized high‐power and very high‐power short‐duration temperature‐controlled ablation: A step‐by‐step guide von De Potter, Tom J. R., De Becker, Benjamin, Duytschaever, Mattias

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Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping von Sedghi, N., Li, H., Brunell, I. F., Dawson, K., Guo, Y., Potter, R. J., Gibbon, J. T., Dhanak, V. R., Zhang, W. D., Zhang, J. F., Hall, S., Robertson, J., Chalker, P. R.

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Ultralow temperature cryoablation using near‐critical nitrogen for cavotricuspid isthmus‐ablation, first‐in‐human results von Klaver, Martijn N., De Potter, Tom J. R., Iliodromitis, Konstantinos, Babkin, Alexander, Cabrita, David, Fabbricatore, Davide, Boersma, Lucas V. A.

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Ultra‐low temperature cryoablation: The coolest innovation EP has been waiting for? von De Potter, Tom J. R., Boersma, Lucas V. A.

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Picosecond laser patterning of PEDOT:PSS thin films von Semaltianos, N.G., Koidis, C., Pitsalidis, C., Karagiannidis, P., Logothetidis, S., Perrie, W., Liu, D., Edwardson, S.P., Fearon, E., Potter, R.J., Dearden, G., Watkins, K.G.

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ULTRARAM: Toward the Development of a III-V Semiconductor, Nonvolatile, Random Access Memory von Lane, D., Hodgson, P. D., Potter, R. J., Beanland, R., Hayne, M.

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Intra- and interobserver variability during in vitro validation of two novel methods for intra-abdominal pressure monitoring von DE POTTER, Tom J. R, DITS, Hilde, MALBRAIN, Manu L. N. G

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Optical properties of GaNAs and GaInAsN quantum wells von Potter, R J, Balkan, N

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II–VI semiconductor nanoparticles synthesized by laser ablation von Semaltianos, N. G., Logothetidis, S., Perrie, W., Romani, S., Potter, R. J., Sharp, M., French, P., Dearden, G., Watkins, K. G.

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Vacuum ultraviolet photochemical selective area atomic layer deposition of Al2O3 dielectrics von Chalker, P. R., Marshall, P. A., Dawson, K., Brunell, I. F., Sutcliffe, C. J., Potter, R. J.

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Polymer-nanoparticle composites composed of PEDOT:PSS and nanoparticles of Ag synthesised by laser ablation von Semaltianos, N. G., Perrie, W., Romani, S., Potter, R. J., Dearden, G., Watkins, K. G.

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Spectroellipsometric assessment of HfO2 thin films von BUIU, O, LU, Y, MITROVIC, I. Z, HALL, S, CHALKER, P, POTTER, R. J

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CdSe nanoparticles synthesized by laser ablation von Semaltianos, N. G, Logothetidis, S, Perrie, W, Romani, S, Potter, R. J, Sharp, M, French, P, Dearden, G, Watkins, K. G

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Drug-eluting stents for the treatment of pulmonary vein stenosis after atrial fibrillation ablation von De Potter, Tom J R, Schmidt, Boris, Chun, Kyoung Ryul Julian, Schneider, Carsten, Malisius, Rainer, Nuyens, Dieter, Ouyang, Feifan, Kuck, Karl-Heinz

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Interface Engineering for Solid-State Dye-Sensitized Nanocrystalline Solar Cells: The Use of Ion-Solvating Hole-Transporting Polymers von Haque, S. A., Park, T., Xu, C., Koops, S., Schulte, N., Potter, R. J., Holmes, A. B., Durrant, J. R.

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Ex vivo efficacy assessment of ultralow temperature cryoablation versus standard RF ablation applied to surgical ventricular patches: implications for ventricular ablation in patie... von De Potter, Tom J R, Buytaert, Dimitri, Valeriano, Chiara, Addeo, Lucio, Babkin, Alex, Ector, Joris

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Global and right ventricular end-diastolic volumes correlate better with preload after correction for ejection fraction von MALBRAIN, M. L. N. G., DE POTTER, T. J. R., DITS, H., REUTER, D. A.

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Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5) x (Al2O3)1− x as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electr... von Partida-Manzanera, T., Roberts, J. W., Bhat, T. N., Zhang, Z., Tan, H. R., Dolmanan, S. B., Sedghi, N., Tripathy, S., Potter, R. J.

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