Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs von Akturk, A., McGarrity, J. M., Potbhare, S., Goldsman, N.

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Compact and Distributed Modeling of Cryogenic Bulk MOSFET Operation von Akturk, A, Holloway, M, Potbhare, S, Gundlach, D, Li, B, Goldsman, N, Peckerar, M, Cheung, K P

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Energy- and Time-Dependent Dynamics of Trap Occupation in 4H-SiC MOSFETs von Potbhare, S., Goldsman, N., Akturk, A., Gurfinkel, M., Lelis, A., Suehle, J.S.

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Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A von Akturk, A., Peckerar, M., Eng, K., Hamlet, J., Potbhare, S., Longoria, E., Young, R., Gurrieri, T., Carroll, M.S., Goldsman, N.

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The Effect of Nitridation on SiC MOS Oxides as Evaluated by Charge Pumping von Lelis, Aivars J., McGarrity, J.M., Potbhare, Siddharth, McLean, F. Barry, Habersat, Daniel B.

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Improvements in SiC MOS Processing as Revealed by Studies of Fixed and Oxide Trap Charge von Lelis, Aivars J., Goldsman, Neil, Potbhare, Siddharth, Habersat, Daniel B.

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The amplitude of random telegraph noise: Scaling implications von Cheung, Kin P., Campbell, J. P., Potbhare, S., Oates, A.

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A Physical Model of High Temperature 4H-SiC MOSFETs von Potbhare, Siddharth, Goldsman, Neil, Lelis, Aivars, McGarrity, James M., McLean, F. Barry, Habersat, Daniel

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Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs von Goldsman, Neil, Lelis, Aivars J., McGarrity, J.M., Pennington, Gary, Potbhare, Siddharth

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Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2 von Goldsman, Neil, Lelis, Aivars J., Pennington, Gary, Potbhare, Siddharth, Habersat, Daniel B.

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Appraisal of Antioxidant Potential of Saussurea lappa and Valeriana wallichii Root Extract by In-vitro Techniques von Potbhare, Mrunali S., Barik, Rakesh

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Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation von Goldsman, Neil, Lelis, Aivars J., McGarrity, J.M., Potbhare, Siddharth, Habersat, Daniel B., Pennington, Gary, McLean, F. Barry

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Investigation of Drain Current Saturation in 4H-SiC MOSFETs von Goldsman, Neil, Lelis, Aivars J., McGarrity, J.M., Potbhare, Siddharth, Habersat, Daniel B., Ashman, C.R., Pennington, Gary

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Characterization of 4H-SiC MOSFET Interface Trap Charge Density Using a First Principles Coulomb Scattering Mobility Model and Device Simulation von Potbhare, S., Goldsman, N., Pennington, G., McGarrity, J.M., Lelis, A.

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Management of Alzheimer’s Disease: A Review of Herbal Drugs Having Potential Pharmacological and Therapeutic Activity von Potbhare, Mrunali S, Barik, Rakesh, Khobragade, Deepak S

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Preclinical appraisal of acute oral toxicity of combination of root extracts of Saussurea lappa (Decne.) Sch.Bip. and Valeriana wallichii (DC.) von Potbhare, Mrunali S., Barik, Rakesh, Khobragade, Deepak S.

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Total Near Interface Trap Density Calculation of 4H-SiC/SiO2 Structures before and after Nitrogen Passivation von Lelis, Aivars J., Goldsman, Neil, Salemi, Shahrzad, Potbhare, Siddharth, Akturk, Akin

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Ion implantation and SiC transistor performance von Gurfinkel, M., Potbhare, S., Xiong, H. D., Suehle, J. S., Shapira, Yoram, Lelis, A. J., Habersat, D., Goldsman, N.

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Silicon Carbide-Silicon Dioxide Transition Layer Mobility von Lelis, Aivars J., Akturk, Akin, Salemi, Shahrzad, Potbhare, Siddharth, Goldsman, Neil

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Silicon Carbide Ultraviolet Photodetector Modeling, Design and Experiments von Potbhare, Siddharth, Sandvik, P., Goldsman, Neil, Vert, Alexey V., Dandin, Marc, Abshire, Pamela, Akturk, Akin, Soloviev, Stanislav I.

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