GaAs structures for X-ray imaging detectors von Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.

Volltext

X-ray detectors based on epitaxial gallium arsenide von Ayzenshtat, G. I., Vilisova, M. D., Drugova, E. P., Lelekov, M. A., Mokeev, D. Yu, Ponomarev, I. V., Porokhovnichenko, L. P., Tolbanov, O. P., Chubirko, V. A.

Volltext

GaAs X-ray coordinate detectors von Ayzenshtat, G.I., Kanaev, V.G., Khan, A.V., Potapov, A.I., Porokhovnichenko, L.P., Tolbanov, O.P., Vorobiev, A.P.

Volltext

Epitaxial structures based on compensated GaAs for γ- and X-ray detectors von Budnitsky, D.L., Germogenov, V.P., Guschin, S.M., Larionov, A.A., Porokhovnichenko, L.P., Potapov, A.I., Tolbanov, O.P., Vorobiev, A.P.

Volltext

Conductivity compensation and deep traps in epitaxial n-GaAs irradiated by electrons von Brudnyi, V. N., Vilisova, M. D., Porokhovnichenko, L. P.

Volltext

Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide von Ivonin, I. V., Krivolapov, N. N., Lavrent'eva, L. G., Porokhovnichenko, L. P.

Volltext

Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes von Bobrovnikova, I. A., Vilisova, M. D., Porokhovnichenko, L. P., Ruzaikin, M. P., Ryazanov, V. N.

Volltext

Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy von Vilisova, M. D., Lavrent'eva, L. G., Porokhovnichenko, L. P., Chernov, N. A.

Volltext

Growth of GaAs epitaxial layers in the proximity of singular faces at various chlorine and impurity (tellurium) pressures von Toropov, S. E., Porokhovnichenko, L. P., Lavrent'eva, L. G.

Volltext

Effects of gas flow speed and chlorine concentration on tellurium uptake in gas-phase epitaxy of gallium arsenide von Lavrent'eva, L. G., Toropov, S. E., Porokhovnichenko, L. P.

Volltext

Influence of thermal processing on the properties of Sn-doped GaAs epitaxial layers von Bobrovnikova, I. A., Vilisova, M. D., Ivleva, O. M., Moskovkin, V. A., Porokhovnichenko, L. P., Turshatova, M. V.

Volltext

Investigation of the structure and properties of sulfur-doped expitaxial gallium arsenide layers von Vilisova, M. D., Ivleva, O. M., Krasil'nikova, L. M., Porokhovnichenko, L. P., Yakubenya, M. P.

Volltext

Anisotropy of impurity trapping by epitaxial layers of gallium arsenide near singular faces with different chlorine and tellurium pressures von Toropov, S. E., Lavrent'eva, L. G., Porokhovnichenko, L. P., Uvarova, E. V.

Volltext

Growth of gallium arsenide in a GaAs-AsCl3-H2 gas-transport system. 2. Growth mechanism von Lavrent'eva, L. G., Ivonin, I. V., Porokhovnichenko, L. P.

Volltext

Growth of gallium arsenide under various initial supersaturation levels in a gaas-ASCL3-H2 gas-transport system: 1. Growth kinetics and structure of epitaxial layers von Lavrent'eva, L. G., Porokhovnichenko, L. P., Ivleva, O. M.

Volltext

Effects of zinc on the growth rate anisotropy of gallium arsenide in the GaAs-AsCl3-H2 system von Lavrent'eva, L. G., Porokhovnichenko, L. P., Tymchishin, P. N.

Volltext

KINETICS AND MECHANISM OF GALLIUM ARSENIDE GROWTH IN GAS-TRANSPORT SYSTEMS von Lavrentyeva, L. G., Ivonin, I. V., Porokhovnichenko, L. P.

Volltext

Local impurity inhomogeneities in autoepitaxial layers of gallium arsenide von Vilisova, M. D., Lavrent'eva, L. G., Porokhovnichenko, L. P., Dorokhov, A. N., Saprykin, A. I.

Volltext

Growth of callium arsenide under various initial supersaturations in a Ga-AsCl3-H2 gas-transport system: III. Electrophysical properties of epitaxial layers von Lavrent'eva, L. G., Vilisova, M. D., Kataev, Yu. T., Porokhovnichenko, L. P.

Volltext

Effect of dopant type on the formation of the growth relief of gallium arsenide in a chloride gas-transport system von Lavrent'eva, L. G., Ivonin, I. V., Krasil'nikova, L. M., Porokhovnichenko, L. P., Vyatkina, I. A.

Volltext