Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride von Campo, E. M., Hopkins, L., Pophristic, M., Ferguson, I. T.

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Single-crystal aluminum nitride nanomechanical resonators von Cleland, A. N., Pophristic, M., Ferguson, I.

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Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT von Xiaobin Xin, Junxia Shi, Linlin Liu, Edwards, J., Swaminathan, K., Pabisz, M., Murphy, M., Eastman, L.F., Pophristic, M.

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Spatial characterization of doped SiC wafers by Raman spectroscopy von Burton, J. C., Sun, L., Pophristic, M., Lukacs, S. J., Long, F. H., Feng, Z. C., Ferguson, I. T.

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Time-resolved photoluminescence measurements of InGaN light-emitting diodes von Pophristic, M., Long, F. H., Tran, C., Ferguson, I. T., Karlicek, R. F.

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Ion-beam-produced damage and its stability in AlN films von Kucheyev, S. O., Williams, J. S., Zou, J., Jagadish, C., Pophristic, M., Guo, S., Ferguson, I. T., Manasreh, M. O.

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High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance von Choi, Y C, Pophristic, M, Peres, B, Cha, H-Y, Spencer, M G, Eastman, L F

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High-conductivity n -AlGaN with high Al mole fraction grown by metalorganic vapor phase deposition von Pophristic, M., Guo, S. P., Peres, B.

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Structural disorder in ion-implanted AlxGa1−xN von Kucheyev, S. O., Williams, J. S., Zou, J., Li, G., Jagadish, C., Manasreh, M. O., Pophristic, M., Guo, S., Ferguson, I. T.

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Raman microscopy of lateral epitaxial overgrowth of GaN on sapphire von Pophristic, M., Long, F. H., Schurman, M., Ramer, J., Ferguson, I. T.

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Time-resolved photoluminescence measurements of quantum dots in InGaN multiple quantum wells and light-emitting diodes von Pophristic, M., Long, F. H., Tran, C., Ferguson, I. T., Karlicek, R. F.

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High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire von Shi, Junxia, Choi, Y. C., Pophristic, M., Spencer, M. G., Eastman, L. F.

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Observation of nitrogen vacancy in proton-irradiated AlxGa1−xN von Zhou, Qiaoying, Manasreh, M. O., Pophristic, M., Guo, S., Ferguson, I. T.

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Time-resolved spectroscopy of InxGa1−xN/GaN multiple quantum wells at room temperature von Pophristic, M., Long, F. H., Tran, C., Karlicek, R. F., Feng, Z. C., Ferguson, I. T.

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Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films von Chaldyshev, V. V., Pollak, Fred H., Pophristic, M., Guo, S. P., Ferguson, I.

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InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers von Jinhyun Lee, Eliseev, P.G., Osinski, M., Dong-Seung Lee, Florescu, D.I., Shiping Guo, Pophristic, M.

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Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition von Guo, S.P., Pophristic, M., Peres, B., Ferguson, I.T.

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Effects of indium incorporation in AlGaN on threading dislocation density von Kang, H., Kandoor, S., Gupta, S., Ferguson, I., Guo, S. P., Pophristic, M.

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Ohmic contacts to Al-rich n -AlGaN von Readinger, E.D., Mohney, S.E., Pribicko, T.G., Wang, J.H., Schweitz, K.O., Chowdhury, U., Wong, M.M., Dupuis, R.D., Pophristic, M., Guo, S.P.

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Analysis of SAW properties in ZnO/Al/sub x/Ga/sub 1-x/N/c-Al/sub 2/O/sub 3/ structures von Ying Chen, Emanetoglu, N.W., Saraf, G., Pan Wu, Yicheng Lu, Parekh, A., Merai, V., Udovich, E., Dong Lu, Lee, D.S., Armour, E.A., Pophristic, M.

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