Porous silica materials as low- k dielectrics for electronic and optical interconnects von Jain, A., Rogojevic, S., Ponoth, S., Agarwal, N., Matthew, I., Gill, W.N., Persans, P., Tomozawa, M., Plawsky, J.L., Simonyi, E.

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Ultra-thin-body and BOX (UTBB) fully depleted (FD) device integration for 22nm node and beyond von Liu, Q, Yagishita, A, Loubet, N, Khakifirooz, A, Kulkarni, P, Yamamoto, T, Cheng, K, Fujiwara, M, Cai, J, Dorman, D, Mehta, S, Khare, P, Yako, K, Zhu, Y, Mignot, S, Kanakasabapathy, S, Monfray, S, Boeuf, F, Koburger, C, Sunamura, H, Ponoth, S, Reznicek, A, Haran, B, Upham, A, Johnson, R, Edge, L F, Kuss, J, Levin, T, Berliner, N, Leobandung, E, Skotnicki, T, Hane, M, Bu, H, Ishimaru, K, Kleemeier, W, Takayanagi, M, Doris, B, Sampson, R

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The effect of Cu diffusion on the TDDB behavior in a low-k interlevel dielectrics von Lloyd, J.R., Murray, C.E., Ponoth, S., Cohen, S., Liniger, E.

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Numerical simulation of mass transfer for bubbles in water von Ponoth, Shom S., McLaughlin, J.B.

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Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS von Khakifirooz, A., Cheng, K., Nagumo, T., Loubet, N., Adam, T., Reznicek, A., Kuss, J., Shahrjerdi, D., Sreenivasan, R., Ponoth, S., He, H., Kulkarni, P., Liu, Q., Hashemi, P., Khare, P., Luning, S., Mehta, S., Gimbert, J., Zhu, Y., Zhu, Z., Li, J., Madan, A., Levin, T., Monsieur, F., Yamamoto, T., Naczas, S., Schmitz, S., Holmes, S., Aulnette, C., Daval, N., Schwarzenbach, W., Nguyen, B.-Y, Paruchuri, V., Khare, M., Shahidi, G., Doris, B.

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Fabrication of micromirrors with self-aligned metallization using silicon back-end-of-the-line processes von Ponoth, Shom S., Agarwal, Navnit T., Persans, Peter D., Plawsky, Joel L.

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Extremely thin SOI (ETSOI) technology: Past, present, and future von Cheng, K, Khakifirooz, A, Kulkarni, P, Ponoth, S, Kuss, J, Edge, L F, Kimball, A, Kanakasabapathy, S, Schmitz, S, Reznicek, A, Adam, T, He, H, Mehta, S, Upham, A, Seo, S, Herman, J L, Johnson, R, Zhu, Y, Jamison, P, Haran, B S, Zhu, Z, Fan, S, Bu, H, Sadana, D K, Kozlowski, P, O'Neill, J, Doris, B, Shahidi, G

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Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length von Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.

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Processing dependent thermal conductivity of nanoporous silica xerogel films von Jain, Anurag, Rogojevic, Svetlana, Ponoth, Shom, Gill, William N., Plawsky, Joel L., Simonyi, Eva, Chen, Shyng-Tsong, Ho, P. S.

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Impact of back bias on ultra-thin body and BOX (UTBB) devices von Liu, Q., Monsieur, F., Kumar, A., Yamamoto, T., Yagishita, A., Kulkarni, P., Ponoth, S., Loubet, N., Cheng, K., Khakifirooz, A., Haran, B., Vinet, M., Cai, J., Kuss, J., Linder, B., Grenouillet, L., Mehta, S., Khare, P., Berliner, N., Levin, T., Kanakasabapathy, S., Upham, A., Sreenivasan, R., Le Tiec, Y., Posseme, N., Li, J., Demarest, J., Smalley, M., Leobandung, E., Monfray, S., Boeuf, F., Skotnicki, T., Ishimaru, K., Takayanagi, M., Kleemeier, W., Bu, H., Luning, S., Hook, T., Khare, M., Shahidi, G., Doris, B., Sampson, R.

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Roughness evolution in polyimide films during plasma etching von Agarwal, Navnit, Ponoth, Shom, Plawsky, Joel, Persans, P. D.

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Optimized oxygen plasma etching of polyimide films for low loss optical waveguides von Agarwal, Navnit, Ponoth, Shom, Plawsky, Joel, Persans, P. D.

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Variability in Fully Depleted MOSFETs von Vinet, M., Hook, T., Le Tiec, Y., Murphy, R., Ponoth, S., Grenouillet, L., Wacquez, R.

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Challenges and opportunities of extremely thin SOI (ETSOI) CMOS technology for future low power and general purpose system-on-chip applications von Khakifirooz, A, Cheng, K, Kulkarni, P, Cai, J, Ponoth, S, Kuss, J, Haran, B S, Kimball, A, Edge, L F, Reznicek, A, Adam, T, He, H, Loubet, N, Mehta, S, Kanakasabapathy, S, Schmitz, S, Holmes, S, Jagannathan, B, Majumdar, A, Yang, D, Upham, A, Seo, S.-C, Herman, J L, Johnson, R, Zhu, Y, Jamison, P, Zhu, Z, Vanamurth, L H, Faltermeier, J, Fan, S, Horak, D, Bu, H, Sadana, D K, Kozlowski, P, McHerron, D, O'Neill, J, Doris, B, Haensch, W, Leobondung, E, Shahidi, G

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Extremely thin SOI for system-on-chip applications von Khakifirooz, A., Cheng, K., Liu, Q., Nagumo, T., Loubet, N., Reznicek, A., Kuss, J., Gimbert, J., Sreenivasan, R., Vinet, M., Grenouillet, L., Le Tiec, Y., Wacquez, R., Ren, Z., Cai, J., Shahrjerdi, D., Kulkarni, P., Ponoth, S., Luning, S., Doris, B.

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Ultra-thin SOI for 20nm node and beyond von Aulnette, C., Schwarzenbach, W., Daval, N., Bonnin, O., Nguyen, B-Y, Mazure, C., Maleville, C., Cheng, K., Ponoth, S., Khakifirooz, A., Hook, T., Doris, B.

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Ultra-Thin Body and BOX (UTBB) Device for Aggressive Scaling of CMOS Technology von Liu, Qing, Yagishita, Atsushi, Kumar, Arvind, Loubet, Nicolas, Yamamoto, Toyoji, Kulkarni, Pranita, Monsieur, Frederic, Khakifirooz, Ali, Ponoth, Shom, Cheng, Kangguo, Haran, Bala, Vinet, Maud, Cai, Jin, Khare, Prasanna, Monfray, Stephane, Boeuf, Frederic, Mehta, Sanjay, Kuss, James, Leobandung, Effendi, Hane, Masami, Bu, Huiming, Ishimaru, Kazunari, Skotnicki, Thomas, Kleemeier, Walter, Takayanagi, Mariko, Hook, Terence, Khare, Mukesh, Luning, Scott, Doris, Bruce, Sampson, Ron

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Enabling the use of ion implantation for ultra-thin FDSOI n-MOSFETs von Vinet, M., Kumar, A., Grenouillet, L., Ponoth, S., Posseme, N., Destefanis, V., Mehta, S., Loubet, N., Le Tiec, Y., Monsieur, F., Liu, Q., Daval, N., Doris, B., Faynot, O., Poiroux, T.

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Implant approaches and challenges for 20nm node and beyond ETSOI devices von Ponoth, S., Vinet, M., Grenouillet, L., Kumar, A., Kulkarni, P., Liu, Q., Cheng, K., Haran, B., Posseme, N., Khakifirooz, A., Loubet, N., Mehta, S., Kuss, J., Destefanis, V., Berliner, N., Sreenivasan, R., Le Tiec, Y., Kanakasabapathy, S., Schmitz, S., Levin, T., Luning, S., Hook, T., Khare, M., Shahidi, G., Doris, B.

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Role of CU in TDDB of Low-K Dielectrics von Lloyd, J.R., Ponoth, S., Liniger, E., Cohen, S.

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