Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy von Pan, C.J., Tu, C.W., Song, J.J., Cantwell, G., Lee, C.C., Pong, B.J., Chi, G.C.

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Stress relaxation in GaN by transfer bonding on Si substrates von Hsu, S. C., Pong, B. J., Li, W. H., Beechem, Thomas E., Graham, Samuel, Liu, C. Y.

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Photoluminescence spectroscopy of Mg-doped GaN von Sheu, J. K., Su, Y. K., Chi, G. C., Pong, B. J., Chen, C. Y., Huang, C. N., Chen, W. C.

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Structural defects and microstrain in GaN induced by Mg ion implantation von Pong, B. J., Pan, C. J., Teng, Y. C., Chi, G. C., Li, W.-H., Lee, K. C., Lee, Chih-Hao

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Photoluminescence of nitrogen-doped ZnO von Pan, C. J., Pong, B. J., Chou, B. W., Chi, G. C., Tu, C. W.

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Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst von Chen, J.Y., Pan, C.J., Tsao, F.C., Kuo, C.H., Chi, G.C., Pong, B.J., Chang, C.Y., Norton, D.P., Pearton, S.J.

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Optical investigation of nitrogen ion implanted bulk ZnO von Pan, C.J., Chen, J.Y., Chi, G.C., Chou, B.W., Pong, B.J., Ren, F., Chang, C.Y., Pearton, S.J.

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Residual strain in ZnO nanowires grown by catalyst-free chemical vapor deposition on GaN/sapphire (0001) von Tsao, F. C., Chen, J. Y., Kuo, C. H., Chi, G. C., Pan, C. J., Huang, P. J., Tun, C. J., Pong, B. J., Hsueh, T. H., Chang, C. Y., Pearton, S. J., Ren, F.

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Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer von Tun, Chun-Ju, Sheu, Jinn-Kong, Pong, Bao-Jen, Lee, Min-Lum, Lee, Ming-Yu, Hsieh, Cheng-Kang, Hu, Ching-Chung, Chi, Gou-Chung

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Improvement of near-ultraviolet nitride-based light emitting diodes with mesh indium tin oxide contact layers von Kuo, C. H., Chen, C. M., Kuo, C. W., Tun, C. J., Pan, C. J., Pong, B. J., Chi, G. C.

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Six Wave Mixing Generated 722 nm Emissions in Sodium Vapor von B. J. Pong, J. E. Fan, C. C. Chu, W. T. Cheng, T. S. Yih

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Nitride-based light-emitting diodes with p-AlInGaN surface layers prepared at various temperatures von Kuo, C. H., Kuo, C. W., Chen, C. M., Pong, B. J., Chi, G. C.

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Si diffusion in p- GaN von Pan, C. J., Chi, G. C., Pong, B. J., Sheu, J. K., Chen, J. Y.

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Microstructure of InN quantum dots grown on AlN buffer layers by metal organic vapor phase epitaxy von Chen, J. Y., Chi, G. C., Huang, P. J., Chen, M. Y., Hung, S. C., Nien, C. H., Chen, M. C., Lan, S. M., Pong, B. J., Pan, C. J., Tun, C. J., Ren, F., Chang, C. Y., Pearton, S. J.

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Nitride-based light-emitting diodes with p - Al In Ga N surface layers prepared at various temperatures von Kuo, C. H., Kuo, C. W., Chen, C. M., Pong, B. J., Chi, G. C.

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Microstructure of InN quantum dots grown on AlN buffer layersby metal organic vapor phase epitaxy von Chen, J. Y., Chi, G. C., Huang, P. J., Chen, M. Y., Hung, S. C., Nien, C. H., Chen, M. C., Lan, S. M., Pong, B. J., Pan, C. J., Tun, C. J., Ren, F., Chang, C. Y., Pearton, S. J.

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Improvement of near-ultraviolet nitride-based light emitting diodeswith mesh indium tin oxide contact layers von Kuo, C. H., Chen, C. M., Kuo, C. W., Tun, C. J., Pan, C. J., Pong, B. J., Chi, G. C.

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Vacuum ultraviolet 178.7 nm emission in sodium vapour under two-photon resonance excitation von Yih, T. S., Pong, B. J., Cheng, W. T., Chu, C. C.

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GaN-based stacked micro-optics system von Hou, Chia-Hung, Chen, Chii-Chang, Pong, Bao-Jen, Li, Ming-Hung, Chi, Gou-Chung, Chen, Nai-Chuan, Shih, Chuan-Feng, Chang, Pen-Hsiu

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Observation of Multiphoton Generated Violet Emissions in Sodium Vapor von T. S. Yih, H. H. Wu, H. S. Fung, J. E. Fan, B. J. Pong, C. Y. R. Wu

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