Three hot-carrier degradation mechanisms in deep-submicron PMOSFET's von Woltjer, R., Paulzen, G.M., Pomp, H.G., Lifka, H., Woerlee, P.H.

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Lightly nitrided gate oxides for 0.25 μm CMOS von Pomp, H.G., Kuiper, A.E.T., Lifka, H., Montree, A.H., Woerlee, P.H.

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Device characterisation of a high-performance 0.25 μm CMOS technology von Woerlee, P.H., Juffermans, C.A.H., Lifka, H., Manders, W.H., Pomp, H.G., Paulzen, G.M., Walker, A.J., Woltjer, R.

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Device Characterisation of a High-Performance 0.25 μm CMOS Technology von Woerlee, P.H., Juffermans, C.A.H., Lifka, H., Manders, W.H., Pomp, H.G., Paulzen, G.M., Walker, A.J., Woltjer, R.

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New hot-carrier degradation mechanisms in 0.25 /spl mu/m PMOSFETs von Woltjer, R., Paulzen, G.M., Pomp, H.G., Lifka, H., Woerlee, P.H.

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Lightly N/sub 2/O nitrided dielectrics grown in a conventional furnace for E/sup 2/PROM and 0.25 /spl mu/m CMOS von Pomp, H.G., Woerlee, P.H., Woltjer, R., Paulzen, G., Lifka, H., Kuiper, A.E.T., de Zaldivar, J.S., Vecsernyes, S.

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On the feasibility of cardiac substructure sparing in magnetic resonance imaging guided stereotactic lung radiotherapy von van der Pol, Luuk H.G., Hackett, Sara L., Hoesein, Firdaus A.A. Mohamed, Snoeren, Louk M.W., Pomp, Jacqueline, Raaymakers, Bas W., Verhoeff, Joost J.C., Fast, Martin F.

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