Oxygen diffusion in Si1−xGex alloys von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Duvanskii, A.V., Sobolev, N.A., Abrosimov, N.V., Riemann, H.

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Interstitial carbon-related defects in Si1−xGex alloys von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Duvanskii, A., Torres, V.J.B., Coutinho, J., Jones, R., Briddon, P.R., Abrosimov, N.V., Riemann, H.

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Complexes of self-interstitials with oxygen atoms in germanium von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M., Markevich, V.P., Murin, L.I., Litvinov, V.V., Carvalho, A., Jones, R., Coutinho, J., Öberg, S., Briddon, P.R.

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Oxygen Diffusion in Si1-xGex Alloys von Khirunenko, Lyudmila I., Pomozov, Yu.V., Duvanskii, A.V., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V., Golyk, S.K.

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Interstitial carbon-related defects in Si 1− x Ge x alloys von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Duvanskii, A., Torres, V.J.B., Coutinho, J., Jones, R., Briddon, P.R., Abrosimov, N.V., Riemann, H.

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Peculiarities of vacancy-related defects formation in Si doped with tin von Khirunenko, L.I., Kobzar, O.O., Pomozov, Yu.V., Sosnin, M.G., Tripachko, M.O.

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Interstitial-related reactions in silicon doped with isovalent impurities von Khirunenko, L.I., Kobzar, O.O., Pomozov, Yu.V., Sosnin, M.G., Tripachko, M.O., Abrosimov, N.V., Riemann, H.

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Local vibrations of interstitial carbon in SiGe alloys von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Trypachko, M.O., Duvanskii, A., Torres, V.J.B., Coutinho, J., Jones, R., Briddon, P.R., Abrosimov, N.V., Riemann, H.

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Interstitial Carbon-Related Defects in Si1-xGex Alloys von Khirunenko, Lyudmila I., Pomozov, Yu.V., Torres, Vitor, Duvanskii, A.V., Briddon, Patrick R., Jones, R., Coutinho, J., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V.

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Divacancy-related complexes in Si (1− x )Ge ( x ) von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Trypachko, M.O., Duvanskii, A.V., Abrosimov, N.V., Riemann, H., Lastovskii, S.B., Murin, L.I., Markevich, V.P., Peaker, A.R.

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Vacancy-dioxygen centers in Si-rich SiGe alloys von Khirunenko, L.I., Pomozov, Yu.V., Sosnin, M.G., Trypachko, M.O., Torres, V.J.B., Coutinho, J., Jones, R., Briddon, P.R., Abrosimov, N.V., Riemann, H.

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Local Vibrations of Substitutional Carbon in SiGe Alloys von Khirunenko, Lyudmila I., Pomozov, Yu.V., Torres, Vitor, Briddon, Patrick R., Jones, R., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V., Coutinho, João A.P.

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Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies von Khirunenko, Lyudmila I., Pomozov, Yu.V., Tripachko, N.A., Duvanskii, A.V., Lindström, J. Lennart, Peaker, Anthony R., Murin, L.I., Sosnin, Mikhail G., Lastovskii, Stanislav B., Makarenko, L.F., Markevich, Vladimir P.

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Self-interstitial-oxygen related defects in low-temperature irradiated Si von Khirunenko, L.I, Murin, L.I, Lindström, J.L, Sosnin, M.G, Pomozov, Yu.V

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Disturbance of oxygen by isovalent impurity atoms in silicon von Khirunenko, L.I, Zasuha, V.A, Pomozov, Yu.V, Sosnin, M.G

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Oxygen in silicon doped with isovalent impurities von Khirunenko, L.I, Pomozov, Yu.V, Sosnin, M.G, Shinkarenko, V.K

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Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium von Khirunenko, Lyudmila I., Pomozov, Yu.V., Tripachko, N.A., Kobzar, O.A., Sosnin, Mikhail G., Riemann, H., Abrosimov, Nikolay V.

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Oxygen and peculiarities of its precipitation in Si1−xGex von Khirunenko, L.I., Sosnin, M.G., Abrosimov, N.V., Höhne, M., Shröder, W., Pomozov, Yu.V.

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Oxygen Precipitation in Silicon Doped with Tin von Khirunenko, Lyudmila I., Pomozov, Yu.V., Sosnin, Mikhail G.

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On the Properties of Divacancies in Si1-xGex von Khirunenko, Lyudmila I., Pomozov, Yu.V., Sosnin, Mikhail G., Schröder, W., Abrosimov, Nikolay V.

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