Silicon‐based passivating contacts: The TOPCon route von Glunz, Stefan W., Steinhauser, Bernd, Polzin, Jana‐Isabelle, Luderer, Christoph, Grübel, Benjamin, Niewelt, Tim, Okasha, Asmaa M. O. M., Bories, Mathias, Nagel, Henning, Krieg, Katrin, Feldmann, Frank, Richter, Armin, Bivour, Martin, Hermle, Martin

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Inline PECVD Deposition of Poly‐Si‐Based Tunnel Oxide Passivating Contacts von Temmler, Jan, Polzin, Jana‐Isabelle, Feldmann, Frank, Kraus, Leonard, Kafle, Bishal, Mack, Sebastian, Moldovan, Anamaria, Hermle, Martin, Rentsch, Jochen

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Towards accurate atom scale characterisation of hydrogen passivation of interfaces in TOPCon architectures von Shi, Yifu, Jones, Megan E., Meier, Martin S., Wright, Matthew, Polzin, Jana-Isabelle, Kwapil, Wolfram, Fischer, Christian, Schubert, Martin C., Grovenor, Chris, Moody, Michael, Bonilla, Ruy S.

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Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts von Polzin, Jana-Isabelle, Lange, Stefan, Richter, Susanne, Moldovan, Anamaria, Bivour, Martin, Hagendorf, Christian, Hermle, Martin, Glunz, Stefan W., Feldmann, Frank

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Impurity Gettering in Polycrystalline‐Silicon Based Passivating Contacts—The Role of Oxide Stoichiometry and Pinholes von Yang, Zhongshu, Krügener, Jan, Feldmann, Frank, Polzin, Jana‐Isabelle, Steinhauser, Bernd, Le, Tien T., Macdonald, Daniel, Liu, AnYao

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Excellent Surface Passivation Quality on Crystalline Silicon Using Industrial‐Scale Direct‐Plasma TOPCon Deposition Technology von Steinhauser, Bernd, Polzin, Jana‐Isabelle, Feldmann, Frank, Hermle, Martin, Glunz, Stefan W.

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Understanding the impurity gettering effect of polysilicon/oxide passivating contact structures through experiment and simulation von Liu, AnYao, Yang, Zhongshu, Feldmann, Frank, Polzin, Jana-Isabelle, Steinhauser, Bernd, Phang, Sieu Pheng, Macdonald, Daniel

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Characterization of solar cell passivating contacts using time-of-flight elastic recoil detection analysis von Shi, Yifu, Wright, Matthew, Sharpe, Matthew K., McAleese, Callum D., Polzin, Jana-Isabelle, Niu, Xinya, Zhao, Zimo, Morris, Stephen M., Bonilla, Ruy S.

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Annealing and firing stability of in situ Boron-doped poly-Si passivating contacts von Polzin, Jana-Isabelle, Feldmann, Frank, Steinhauser, Bernd, Bivour, Martin, Hermle, Martin

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Study on the interfacial oxide in passivating contacts von Polzin, Jana-Isabelle, Feldmann, Frank, Steinhauser, Bernd, Hermle, Martin, Glunz, Stefan W.

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A Study on the Charge Carrier Transport of Passivating Contacts von Feldmann, Frank, Nogay, Gizem, Polzin, Jana-Isabelle, Steinhauser, Bernd, Richter, Armin, Fell, Andreas, Schmiga, Christian, Hermle, Martin, Glunz, Stefan W.

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Measurement of poly-Si film thickness on textured surfaces by X-ray diffraction in poly-Si/SiOx passivating contacts for monocrystalline Si solar cells von Chen, Kejun, Bothwell, Alexandra, Guthrey, Harvey, Hartenstein, Matthew B., Polzin, Jana-Isabelle, Feldmann, Frank, Nemeth, William, Theingi, San, Page, Matthew, Young, David L., Stradins, Paul, Agarwal, Sumit

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Influence of Intrinsic Silicon Layer and Intermediate Silicon Oxide Layer on the Performance of Inline PECVD Deposited Boron-Doped TOPCon von Harter, Angelika, Polzin, Jana-Isabelle, Tutsch, Leonard, Temmler, Jan, Hofmann, Marc, Moldovan, Anamaria, Feldmann, Frank

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Deposition and properties of sputtered phosphorus doped amorphous silicon films for passivating contacts von Baumann, Jens, Schneiderlöchner, Eric, Polzin, Jana-Isabelle, Feldmann, Frank, Bivour, Martin, Hermle, Martin

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Realization of TOPCon using industrial scale PECVD equipment von Polzin, Jana-Isabelle, Feldmann, Frank, Steinhauser, Bernd, Hermle, Martin, Glunz, Stefan

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Local Enhancement of Dopant Diffusion from Polycrystalline Silicon Passivating Contacts von Fırat, Meriç, Wouters, Lennaert, Lagrain, Pieter, Haase, Felix, Polzin, Jana-Isabelle, Chaudhary, Aditya, Nogay, Gizem, Desrues, Thibaut, Krügener, Jan, Peibst, Robby, Tous, Loic, Sivaramakrishnan Radhakrishnan, Hariharsudan, Poortmans, Jef

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Intense pulsed light in back end processing of solar cells with passivating contacts based on amorphous or polycrystalline silicon layers von Schube, Jörg, Tutsch, Leonard, Fellmeth, Tobias, Feldmann, Frank, Weil, Maximilian, Harter, Angelika, Polzin, Jana-Isabelle, Bivour, Martin, Keding, Roman, Glunz, Stefan W.

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Critical slowing down of the charge carrier dynamics at the Mott metal-insulator transition von Hartmann, Benedikt, Zielke, David, Polzin, Jana, Sasaki, Takahiko, Müller, Jens

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Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells von Yang, Zhongshu, Krügener, Jan, Feldmann, Frank, Polzin, Jana-Isabelle, Steinhauser, Bernd, Aleshin, Matvei, Le, Tien T., Macdonald, Daniel, Liu, AnYao

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Simultaneous Boron Emitter Diffusion and Annealing of Tunnel Oxide Passivated Contacts Via Rapid Vapor-Phase Direct Doping von Driesen, Marion, Richter, Armin, Polzin, Jana-Isabelle, Feldmann, Frank, Steinhauser, Bernd, Ohnemus, Markus, Weiss, Charlotte, Benick, Jan, Janz, Stefan

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