Boolean Factor Analysis by Attractor Neural Network von Frolov, A.A., Husek, D., Muraviev, I.P., Polyakov, P.Yu

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Laser evaporation of some solid organosilicon polymers von Pola, J, Vitek, J, Polyakov, Yu P, Guselnikov, L E, Matveychev, P M, Bashkirova, S A, Tläskal, J, Mayer, R

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BFA and BMF: What is the difference von Frolov, A. A., Abraham, A., Polyakov, P. Y., Husek, D., Rezankova, H.

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Structure of 2,2,5,5,6,6,9,9-octamethyl-2,5,6,9-tetrasiladecane, a structural precursor of poly[(tetramethyldisilanediyl)ethylene] von Ovchinnikov, Yuri E., Shklover, Valeri E., Struchkov, Yuri T., Polyakov, Yuri P., Gusel'nikov, Leonid E.

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2,5-Dichloro-2,5-dimethyl-2,5-disilahexane, C6H16Cl2Si2 von Ovchinnikov, Yu. E., Shklover, V. E., Struchkov, Yu. T., Polyakov, Yu. P., Guselnikov, L. E.

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Hydrodynamics and conformation of polyethylene-polysilylene molecules von Tverdokhlebova, I.I., Sutkevich, O.I., Polyakov, Yu.P., Guselnikov, L.Ye, Bashkirova, S.A.

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Silyl and silylmethyl radicals, silylenes, sila-alkenes, and small ring silacycles in reactions of organochlorosilanes with alkali metal vapours von Gusel'nikov, L.E., Polyakov, Yu.P., Volnina, E.A., Nametkin, N.S.

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1,1-dimethyl-1-silaethylene in the reaction of chloromethylpentamethyldisilane with alkali metal vapors von Gusel'nikov, L. E., Polyakov, Yu. P., Volnina, . A., Ivanov, A. V., Nametkin, N. S.

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New method for the preparation of 1,1-dimethyl-1-sila-3-cyclopentene von Gusel'nikov, L. E., Kerzina, Z. A., Polyakov, Yu. P., Nametkin, N. S.

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The preparation of organomagnesium compounds from monochloromethyl ether and by a new method of synthesis of methoxysilanes von Nametkin, N. S., Volnina, . A., Polyakov, Yu. P., Gusel'nikov, L. E.

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BH4-deficient hyperphenylalaninemia in Russia von Gundorova, Polina, Kuznetcova, Irina A, Baydakova, Galina V, Stepanova, Anna A, Itkis, Yulia S, Kakaulina, Victoria S, Alferova, Irina P, Lyazina, Lidya V, Andreeva, Lilya P, Kanivets, Ilya, Zakharova, Ekaterina Y, Kutsev, Sergey I, Polyakov, Aleksander V

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Mechanical behavior of porous Si3N4 ceramics manufactured with 3D printing technology von Lurie, S. A., Solyaev, Y. O., Rabinskiy, L. N., Polyakov, P. O., Sevostianov, I.

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Recombination and optical properties of dislocations gliding at room temperature in GaN under applied stress von Vergeles, P.S., Orlov, V.I., Polyakov, A.Y., Yakimov, E.B., Kim, Taehwan, Lee, In-Hwan

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On the nature of photosensitivity gain in Ga2O3 Schottky diode detectors: Effects of hole trapping by deep acceptors von Yakimov, E.B., Polyakov, A.Y., Shchemerov, I.V., Smirnov, N.B., Vasilev, A.A., Kochkova, A.I., Vergeles, P.S., Yakimov, E.E., Chernykh, A.V., Xian, Minghan, Ren, F., Pearton, S.J.

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First Measurement of Transverse-Spin-Dependent Azimuthal Asymmetries in the Drell-Yan Process von Aghasyan, M, Akhunzyanov, R, Alexeev, G D, Alexeev, M G, Amoroso, A, Andrieux, V, Anfimov, N V, Anosov, V, Antoshkin, A, Augsten, K, Augustyniak, W, Austregesilo, A, Azevedo, C D R, Badełek, B, Balestra, F, Ball, M, Barth, J, Beck, R, Bedfer, Y, Bernhard, J, Bicker, K, Bielert, E R, Birsa, R, Bodlak, M, Bordalo, P, Bradamante, F, Bressan, A, Büchele, M, Chang, W-C, Chatterjee, C, Chiosso, M, Choi, I, Chung, S-U, Cicuttin, A, Crespo, M L, Dalla Torre, S, Dasgupta, S S, Dasgupta, S, Denisov, O Yu, Dhara, L, Donskov, S V, Doshita, N, Dreisbach, Ch, Dünnweber, W, Dziewiecki, M, Efremov, A, Eversheim, P D, Faessler, M, Ferrero, A, Finger, M, Fischer, H, Franco, C, du Fresne von Hohenesche, N, Friedrich, J M, Frolov, V, Fuchey, E, Gautheron, F, Gavrichtchouk, O P, Gerassimov, S, Giarra, J, Giordano, F, Gnesi, I, Gorzellik, M, Grasso, A, Grosse Perdekamp, M, Grube, B, Grussenmeyer, T, Guskov, A, Hahne, D, Hamar, G, von Harrach, D, Heinsius, F H, Heitz, R, Herrmann, F, Horikawa, N, d'Hose, N, Hsieh, C-Y, Huber, S, Ishimoto, S, Ivanov, A, Ivanshin, Yu, Iwata, T, Jary, V, Joosten, R, Jörg, P, Kabuß, E, Kerbizi, A, Ketzer, B, Khaustov, G V, Khokhlov, Yu A, Kisselev, Yu, Klein, F, Koivuniemi, J H, Kolosov, V N, Kondo, K, Königsmann, K, Konorov, I, Konstantinov, V F, Kotzinian, A M

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Experimental estimation of electron–hole pair creation energy in β-Ga2O3 von Yakimov, E. B., Polyakov, A. Y., Shchemerov, I. V., Smirnov, N. B., Vasilev, A. A., Vergeles, P. S., Yakimov, E. E., Chernykh, A. V., Ren, F., Pearton, S. J.

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Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3 von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yakimov, E. B., Pearton, S. J., Fares, Chaker, Yang, Jiancheng, Ren, Fan, Kim, Jihyun, Lagov, P. B., Stolbunov, V. S., Kochkova, A.

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments von Lee, In-Hwan, Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Lagov, P. B., Zinov'ev, R. A., Yakimov, E. B., Shcherbachev, K. D., Pearton, S. J.

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Hydrogen plasma treatment of β-Ga2O3: Changes in electrical properties and deep trap spectra von Polyakov, A. Y., Lee, In-Hwan, Smirnov, N. B., Yakimov, E. B., Shchemerov, I. V., Chernykh, A. V., Kochkova, A. I., Vasilev, A. A., Ren, F., Carey, P. H., Pearton, S. J.

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Electrical and Recombination Properties of Polar Orthorhombic κ-Ga2O3 Films Prepared by Halide Vapor Phase Epitaxy von Yakimov, Eugene B., Polyakov, Alexander Y., Nikolaev, Vladimir I., Pechnikov, Alexei I., Scheglov, Mikhail P., Yakimov, Eugene E., Pearton, Stephen J.

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