High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source von Goray, L. I., Pirogov, E. V., Svechnikov, M. V., Sobolev, M. S., Polyakov, N. K., Gerchikov, L. G., Nikitina, E. V., Dashkov, A. S., Borisov, M. M., Yakunin, S. N., Bouravleuv, A. D.

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Super-radiant mode in InAs—monolayer–based Bragg structures von Pozina, G., Kaliteevski, M. A., Nikitina, E. V., Denisov, D. V., Polyakov, N. K., Pirogov, E. V., Goray, L. I., Gubaydullin, A. R., Ivanov, K. A., Kaliteevskaya, N. A., Egorov, A. Yu, Clark, S. J.

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Effect of growth kinetics on the structural and optical properties of quantum dot ensembles von Dubrovskii, V.G., Cirlin, G.E., Musikhin, Yu.G., Samsonenko, Yu.B., Tonkikh, A.A., Polyakov, N.K., Egorov, V.A., Tsatsul’nikov, A.F., Krizhanovskaya, N.A., Ustinov, V.M., Werner, P.

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Formation of InAs quantum dots on a silicon (100) surface von Cirlin, G E, Dubrovskii, V G, Petrov, V N, Polyakov, N K, Korneeva, N P, Demidov, V N, Golubok, A O, Masalov, S A, Kurochkin, D V, Gorbenko, O M, Komyak, N I, Ustinov, V M, Egorov, A Yu, Kovsh, A R, Maximov, M V, Tsatsul'nikov, A F, Volovik, B V, Zhukov, A E, Kop'ev, P S, Alferov, Zh I, Ledentsov, N N, Grundmann, M, Bimberg, D

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Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si von Karl, H, Grosshans, I, Wenzel, A, Stritzker, B, Claessen, R, Strocov, V N, Cirlin, G E, Egorov, V A, Polyakov, N K, Samsonenko, Yu B, Denisov, D V, Ustinov, V M, Alferov, Zh I

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Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate von Zakharov, N. D., Werner, P., Gösele, U., Heitz, R., Bimberg, D., Ledentsov, N. N., Ustinov, V. M., Volovik, B. V., Alferov, Zh. I., Polyakov, N. K., Petrov, V. N., Egorov, V. A., Cirlin, G. E.

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Deep X-Ray Reflectometry of Supermultiperiod A(3)B(5) Structures with Quantum Wells Grown by Molecular-Beam Epitaxy von Goray, L. I., Pirogov, E. V., Sobolev, M. S., Polyakov, N. K., Dashkov, A. S., Svechnikov, M. V., Bouravleuv, A. D.

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Influence of MBE growth conditions on the surface morphology of Al(Ga)As nanowhiskers von Tonkikh, A. A., Cirlin, G. E., Dubrovskii, V. G., Sibirev, N. V., Soshnikov, I. P., Samsonenko, Yu. B., Polyakov, N. K., Ustinov, V. M.

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Deep X-Ray Reflectometry of Supermultiperiod A.sub.3B.sub.5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy von Goray, L. I, Pirogov, E. V, Sobolev, M. S, Polyakov, N. K, Dashkov, A. S, Svechnikov, M. V, Bouravleuv, A. D

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Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy von Goray, L. I., Pirogov, E. V., Sobolev, M. S., Polyakov, N. K., Dashkov, A. S., Svechnikov, M. V., Bouravleuv, A. D.

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Localization of Holes in an InAs∕GaAs Quantum-Dot Molecule von Sobolev, M. M.

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The Stark Shift of the Hole States in Separate InAs∕GaAs Quantum Dots Grown on (100) and (311)A GaAs Substrates von Sobolev, M. M.

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Dependence of structural and optical properties of QD arrays in an InAs/GaAs system on surface temperature and growth rate von Dubrovskii, V. G., Musikhin, Yu. G., Cirlin, G. É., Egorov, V. A., Polyakov, N. K., Samsonenko, Yu. B., Tonkikh, A. A., Kryzhanovskaya, N. V., Bert, N. A., Ustinov, V. M.

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The Optical Properties of Heterostructures with Quantum-Confined InGaAsN Layers on a GaAs Substrate and Emitting at 1.3–1.55 μm von Kryzhanovskaya, N. V.

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Photoluminescence emission (1.3–1.4 μm) from quantum dots heterostructures based on GaAs von Egorov, V.A, Polyakov, N.K, Tonkikh, A.A, Petrov, V.N, Cirlin, G.E, Volovik, B.V, Zhukov, A.E, Musikhin, Yu.G, Cherkashin, N.A, Ustinov, V.M

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Incorporation of InAs nanostructures in a silicon matrix: growth, structure and optical properties von Cirlin, G.E., Polyakov, N.K., Petrov, V.N., Egorov, V.A., Denisov, D.V., Volovik, B.V., Ustinov, V.M., Alferov, Zh.I., Ledentsov, N.N., Heitz, R., Bimberg, D., Zakharov, N.D., Werner, P., Gösele, U.

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Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces von Samsonenko, Yu. B., Cirlin, G. E., Khrebtov, A. I., Bouravleuv, A. D., Polyakov, N. K., Ulin, V. P., Dubrovskii, V. G., Werner, P.

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The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix von Samsonenko, Yu. B.

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Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system von Dubrovskii, V. G., Egorov, V. A., Cirlin, G. E., Polyakov, N. K., Samsonenko, Yu. B., Kryzhanovskaya, N. V., Tsatsul’nikov, A. F., Ustinov, V. M.

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Spectroscopy of exciton states of InAs quantum molecules von Talalaev, V. G., Tomm, J. W., Zakharov, N. D., Werner, P., Novikov, B. V., Cirlin, G. É., Samsonenko, Yu. B., Tonkikh, A. A., Egorov, V. A., Polyakov, N. K., Ustinov, V. M.

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