Dividing ASEAN and Conquering the South China Sea: China’s Financial Power Projection von Poling, Gregory B.

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Wafer-scale GaN HEMT performance enhancement by diamond substrate integration von Via, G. D., Felbinger, J. G., Blevins, J., Chabak, K., Jessen, G., Gillespie, J., Fitch, R., Crespo, A., Sutherlin, K., Poling, B., Tetlak, S., Gilbert, R., Cooper, T., Baranyai, R., Pomeroy, J. W., Kuball, M., Maurer, J. J., Bar-Cohen, A.

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Direct observation of 0.57eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors von Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

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Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation von Poling, B.S., Via, G.D., Bole, K.D., Johnson, E.E., McDermott, J.M.

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FROM ORBIT TO OCEAN von Poling, Gregory B

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FROM ORBIT TO OCEAN: Fixing Southeast Asia’s Remote-Sensing Blind Spots von Poling, Gregory B.

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FROM ORBIT TO OCEAN: Fixing Southeast Asia's Remote-Sensing Blind Spots von Poling, Gregory B

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Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors von Arehart, A.R., Sasikumar, A., Rajan, S., Via, G.D., Poling, B., Winningham, B., Heller, E.R., Brown, D., Pei, Y., Recht, F., Mishra, U.K., Ringel, S.A.

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Dividing Asean and Conquering the South China Sea: China's Financial Power Projection by Daniel C. O'Neill (review) von Poling, Gregory B

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Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing von Poling, B.S., Brown, J.L., Heller, E.R., Stumpff, B., Beckman, J.A., Hilton, A.M.

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Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN von Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.

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Evidence for causality between GaN RF HEMT degradation and the E sub(C)-0.57 eV trap in GaN von Arehart, A R, Sasikumar, A, Via, G D, Poling, B, Heller, E R, Ringel, SA

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Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps von Sasikumar, A., Arehart, A.R., Via, G.D., Winningham, B., Poling, B., Heller, E., Ringel, S.A.

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Cation diffusion and ionic conductivity in soda-lime silicate glasses von NATRUP, F. V, BRACHT, H, MURUGAVEL, S, POLING, B

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Evidence for causality between GaN RF HEMT degradation and the EC-0.57eV trap in GaN von Arehart, A.R., Sasikumar, A., Via, G.D., Poling, B., Heller, E.R., Ringel, S.A.

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Avoiding the False China-U.S. Narrative in the South China Sea von Poling, Gregory B.

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Vapor pressure prediction and correlation from the triple point to the critical point von Poling, Bruce E.

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Direct observation of 0.57 eV trap-related RF output power reduction in AIGaN/GaN high electron mobility transistors von AREHART, A. R, SASIKUMAR, A, MISHRA, U. K, RINGEL, S. A, RAJAN, S, VIA, G. D, POLING, B, WINNINGHAM, B, HELLER, E. R, BROWN, D, PEI, Y, RECHT, F

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Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs von Arehart, A R, Sasikumar, A, Via, G D, Winningham, B, Poling, B, Heller, E, Ringel, S A

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Vapor-liquid equilibrium data for the NH3-H2O system and its description with a modified cubic equation of state von SMOLEN, T. M, MANLEY, D. B, POLING, B. E

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