Papier à lettre et analogue permettant de supprimer les enveloppes von POISSON MAURICE

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Treatment of malignant gliomas and brain metastases in adults with a combination of adriamycin, VM 26, and CCNU. Results of a phase II trial von Pouillart, Pierre, Mathe, Georges, Thy, Thao Hoang, Lheritier, Jean, Poisson, Maurice, Huguenin, Pierre, Gauthier, Henry, Morin, Philippe, Parrot, Robert

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Treatment of malignant gliomas and brain metastases in adults with a combination of adriamycin, VM 26, and CCNU.Results of a phase II trial von Pouillart, Pierre, Mathe, Georges, Thy, Thao Hoang, Lheritier, Jean, Poisson, Maurice, Huguenin, Pierre, Gauthier, Henry, Morin, Philippe, Parrot, Robert

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Fermeture de sureté pour plaques de controle de bicyclettes von POISSON MAURICE-JOSEPH, CLERMONT HENRI

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Evaluation of Thermal Versus Plasma-Assisted ALD Al2O3 as Passivation for InAlN/AlN/GaN HEMTs von Malmros, Anna, Gamarra, Piero, Di Forte-Poisson, Marie-Antoinette, Hjelmgren, Hans, Lacam, Cedric, Thorsell, Mattias, Tordjman, Maurice, Aubry, Raphael, Rorsman, Niklas

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Optimisation of a carbon doped buffer layer for AlGaN/GaN HEMT devices von Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Splettstösser, Jörg, Schauwecker, Bernd, di Forte-Poisson, Marie-Antoinette

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In-situ passivation of quaternary barrier InAlGaN/GaN HEMTs von Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, Medjdoub, Farid, di Forte-Poisson, Marie-Antoinette

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Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation von Malmros, Anna, Gamarra, Piero, Thorsell, Mattias, Forte-Poisson, Marie-Antoinette di, Lacam, Cedric, Tordjman, Maurice, Aubry, Raphaël, Zirath, Herbert, Rorsman, Niklas

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design von Bisi, Davide, Chini, Alessandro, Soci, Fabio, Stocco, Antonio, Meneghini, Matteo, Pantellini, Alessio, Nanni, Antonio, Lanzieri, Claudio, Gamarra, Piero, Lacam, Cedric, Tordjman, Maurice, di-Forte-Poisson, Marie-Antoinette, Meneghesso, Gaudenzio, Zanoni, Enrico

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Effects of Surface Passivation and Deposition Methods on the 1/ f Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors von Do, Thanh Ngoc Thi, Malmros, Anna, Gamarra, Piero, Lacam, Cedric, Di Forte-Poisson, Marie-Antoinette, Tordjman, Maurice, Horberg, Mikael, Aubry, Raphael, Rorsman, Niklas, Kuylenstierna, Dan

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High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure von Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-Antoinette

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The effect of ammonia flow in the AlN spacer on the electrical properties of InAlN/AlN/GaN HEMT structures von Gamarra, Piero, Lacam, Cedric, Magis, Michelle, Tordjman, Maurice, Poisson, Marie-Antoinette di Forte

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application von di Forte Poisson, M.-A., Magis, M., Tordjman, M., Di Persio, J., Langer, R., Toth, L., Pecz, B., Guziewicz, M., Thorpe, J., Aubry, R., Morvan, E., Sarazin, N., Gaquière, C., Meneghesso, G., Hoel, V., Jacquet, J.-C., Delage, S.

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD von di Forte Poisson, M.-A., Sarazin, N., Magis, M., Tordjman, M., Morvan, E., Aubry, R., di Persio, J., Grimbert, B.

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The effect of ammonia flow in the AIN spacer on the electrical properties of InAlN/AlN/GaN H E MT structures : Indium Nitride and Related Alloys von GAMARRA, Piero, LACAM, Cedric, MAGIS, Michelle, TORDJMAN, Maurice, DI FORTE POISSON, Marie-Antoinette

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PROCEDE ET INSTALLATION DE REDUCTION DU TREMBLEMENT DE LA VOILURE D'UN AERONEF AU MOYEN DE GOUVERNES ACTIVES von ROGER, MAURICE DESTUYNDER, JACQUES BOUTTES ET PHILIPPE POISSON-QUINTON

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Sulfonylurea herbicide resistance in Sonchus asper biotypes in Alberta, Canada von Rashid, A, Newman, J C, O'Donovan, J T, Robinson, D, Maurice, D, Poisson, D, Hall, L M

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LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide. Application to HEMT's devices von Di Forte-Poisson, Marie-Antoinette, Magis, M., Tordjman, Maurice, Aubry, Raphaël, Sarazin, Nicolas, Peschang, M., Morvan, Erwan, Delage, Sylvain Laurent, Di Persio, J., Quere, R., Grimbert, B., Hoel, Virginie, Delos, E., Ducatteau, Damien, Gaquière, Christophe

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Oceanic Radiocarbon Between Antarctica and South Africa Along Woce Section 16 at 30°E von Leboucher, Viviane, Orr, James, Jean-Baptiste, Philippe, Arnold, Maurice, Monfray, Patrick, Tisnerat-Laborde, Nadine, Poisson, Alain, Duplessy, Jean-Claude

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Additions and Corrections- The Stereochemistry of the Pentacyclic Oxindole Alkaloids von Shamma, Maurice, shine, Robert J, Kompis, Ivan, Sticzay, T, Morsingh, F, Poisson, J, Pousset, J.-L

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