Effect of Resistance-Area-Product and Thermal Environment on Writing of Magneto-Thermal MRAM von Deak, J.G., Daughton, J.M., Pohm, A.V.

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Ultra-low hysteresis and self-biasing in GMR sandwich sensor elements von Anderson, J.M., Pohm, A.V.

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Universal HSPICE macromodel for giant magnetoresistance memory bits von Das, B., Black, W.C., Pohm, A.V.

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Exchange coupling and edge pinning in vertical head sensors von Pohm, A.V., Anderson, J.M., Beech, R.S., Daughton, J.M.

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Experimental and analytical properties of 0.2 micron wide, multi-layer, GMR, memory elements von Pohm, A.V., Beech, R.S., Daughton, J.M., Everitt, B.A., Chen, E.Y., Durlam, M., Nordquist, K., Zhu, T., Tehrani, S.

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High sensitivity, GMR, 1 micron wide, end-on, ganged, read head sensors von Chen, E.Y., Pohm, A.V., Daughton, J.M., Brown, J., Black, W.C.

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Analysis of 0.1 to 0.3 micron wide, ultra dense GMR memory elements von Pohm, A.V., Beech, R.S., Bade, P.A., Chen, E.Y., Daughton, J.M.

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Properties of 1.42.8 mu m/sup 2/ active area M-R elements von Granley, G.B., Daughton, J.M., Pohm, A.V., Comstock, C.S.

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A high output mode for submicron M-R memory cells von Pohm, A.V., Daughton, J.M., Spears, K.E.

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Vertical giant magnetoresistive read heads for 50-Gb/in2 magnetic recording von EVERITT, B. A, OLSON, D, VAN NGUYEN, Thu, AMIN, N, POKHIL, T, KOLBO, P, ZHONG, L, MURDOCK, Ed, POHM, A. V, DAUGHTON, J. M

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Pseudo spin valve MRAM cells with sub-micrometer critical dimension von Everitt, B.A., Pohm, A.V., Beech, R.S., Fink, A., Daughton, J.M.

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Vertical giant magnetoresistive read heads for 50-Gb/in/sup 2/ magnetic recording von Everitt, B.A., Olson, D., van Nguyen, T., Amin, N., Pokhil, T., Kolbo, P., Zhong, L., Murdock, E., Pohm, A.V., Daughton, J.M.

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1-Mb memory chip using giant magnetoresistive memory cells von Brown, J.L., Pohm, A.V.

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Single-domain model for pseudo spin valve MRAM cells von Everitt, B.A., Pohm, A.V.

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The architecture of a high performance mass store with GMR memory cells von Pohm, A.V., Daughton, J.M., Brown, J., Beech, R.

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Two leg, side by side, 0.6 to 1.0 micron wide, high output, vertical, GMR, head sensors von Pohm, A.V., Anderson, J.M., Beech, R.S., Daughton, J.M.

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Bias field and end effects on the switching thresholds of "pseudo spin valve" memory cells von Pohm, A.V., Everitt, B.A., Beech, R.S., Daughton, J.M.

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Narrow end-on giant magnetoresistance READ-head sensors von Pohm, A.V., Beech, R.S., Anderson, J.M., Black, W.C.

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Bounding delay on a token ring network with voice, data and facsimile applications: a simulation study von Gaitonde, S.S., Jacobson, D.W., Pohm, A.V.

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Simulation of sub-micron GMR memory cells von Beech, R.S., Pohm, A.V., Daughton, J.M.

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