Growth of bulk AlN crystals by vapor-phase epitaxy from atomic Al and NH3 von Pogorel’skii, M. Yu, Alekseev, A. N., Pogorel’skii, Yu. V., Shkurko, A. P.

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on silicon substrates von Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.

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Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE on AlN/SiC substrates von Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Kokin, S. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Chalyĭ, V. P., Shkurko, A. P.

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GaN/InGaN heterostructures grown by ammonia MBE with a wetting metal indium layer von Alekseev, A. N., Byrnaz, A. É., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyĭ, V. P., Shkurko, A. P.

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Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE von Alekseev, A. N., Aleksandrov, S. B., Byrnaz, A. É., Velikovskiĭ, L. É., Velikovskiĭ, I. É., Veretekha, A. V., Krasovitskiĭ, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skiĭ, M. Yu, Pogorel’skiĭ, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Tkachenko, A. G., Shkurko, A. P., Chalyĭ, V. P.

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Microwave field-effect transistors based on group-III nitrides von Aleksandrov, S. B., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Stepanov, M. V., Chalyi, V. P., Gladysheva, N. B., Dorofeev, A. A., Matveev, Yu. A., Chernyavskii, A. A.

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AlGaN/GaN HEMTs grown by ammonia MBE von Volkov, V. V., Ivanova, V. P., Kuz’michev, Yu. S., Lermontov, S. A., Solov’ev, Yu. V., Baranov, D. A., Kaidash, A. P., Krasovitskii, D. M., Pavlenko, M. V., Petrov, S. I., Pogorel’skii, Yu. V., Sokolov, I. A., Sokolov, M. A., Stepanov, M. V., Chalyi, V. P.

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High-power low-threshold laser diodes (λ=0.94μm) based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs heterostructures von Aleksandrov, S. B., Alekseev, A. N., Demidov, D. M., Dudin, A. L., Katsavets, N. I., Kogan, I. V., Pogorel’skii, Yu. V., Ter-Martirosyan, A. L., Sokolov, É. G., Chaly, V. P., Shkurko, A. P.

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MBE of InGaN/GaN heterostructures using ammonia as a source of nitrogen von Petrov, S. I., Kaidash, A. P., Krasovitskii, D. M., Sokolov, I. A., Pogorel’skii, Yu. V., Chalyi, V. P., Shkurko, A. P., Stepanov, M. V., Pavlenko, M. V., Baranov, D. A.

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Facing of parts operating in a fluroplastic medium with MnMts 60-20-20 alloy von Chistyakov, A. P., Myshko, Yu. D., Nechiporenko, V. G., Pogorel'skii, S. V.

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Laser emission from the XeO molecule under optical pumping conditions von Basov, N G, Babeĭko, Yu A, Zuev, V S, Mikheev, L D, Orlov, V K, Pogorel'skiĭ, I V, Stavrovskiĭ, D B, Startsev, Aleksandr V, Yalovoĭ, V I

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