Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination von Koller, C., Lymperakis, L., Pogany, D., Pobegen, G., Ostermaier, C.

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Review of bias-temperature instabilities at the III-N/dielectric interface von Ostermaier, C., Lagger, P., Reiner, M., Pogany, D.

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Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress von Lagger, P., Steinschifter, P., Reiner, M., Stadtmüller, M., Denifl, G., Naumann, A., Müller, J., Wilde, L., Sundqvist, J., Pogany, D., Ostermaier, C.

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On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices von Stabentheiner, M., Diehle, P., Hübner, S., Lejoyeux, M., Altmann, F., Neumann, R., Taylor, A. A., Pogany, D., Ostermaier, C.

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Low-frequency noise in quasi-ballistic monolithic Al–Ge–Al nanowire field effect transistors von Behrle, R., Sistani, M., Lugstein, A., Sadre Momtaz, Z., den Hertog, M. I., Pogany, D., Weber, W. M.

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Modeling small-signal response of GaN-based metal-insulator-semiconductor high electron mobility transistor gate stack in spill-over regime: Effect of barrier resistance and interf... von Capriotti, M., Lagger, P., Fleury, C., Oposich, M., Bethge, O., Ostermaier, C., Strasser, G., Pogany, D.

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Low-frequency noise characterization of single CuO nanowire gas sensor devices von Steinhauer, S., Köck, A., Gspan, C., Grogger, W., Vandamme, L. K. J., Pogany, D.

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Low power phase change memory switching of ultra-thin In3Sb1Te2 nanowires von Selmo, S., Cecchini, R., Cecchi, S., Wiemer, C., Fanciulli, M., Rotunno, E., Lazzarini, L., Rigato, M., Pogany, D., Lugstein, A., Longo, M.

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Current conduction mechanism and electrical break-down in InN grown on GaN von Kuzmik, J., Fleury, C., Adikimenakis, A., Gregušová, D., Ťapajna, M., Dobročka, E., Haščík, Š., Kučera, M., Kúdela, R., Androulidaki, M., Pogany, D., Georgakilas, A.

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Dynamics of carrier transport via AlGaN barrier in AlGaN/GaN MIS-HEMTs von Ostermaier, C., Lagger, P., Prechtl, G., Grill, A., Grasser, T., Pogany, D.

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Modeling current transport in boron-doped diamond at high electric fields including self-heating effect von Lambert, N., Taylor, A., Hubík, P., Bulíř, J., More-Chevalier, J., Karaca, H., Fleury, C., Voves, J., Šobáň, Z., Pogany, D., Mortet, V.

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Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capability von Capriotti, M., Alexewicz, A., Fleury, C., Gavagnin, M., Bethge, O., Visalli, D., Derluyn, J., Wanzenböck, H. D., Bertagnolli, E., Pogany, D., Strasser, G.

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Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors von Kuzmik, J., Pozzovivo, G., Ostermaier, C., Strasser, G., Pogany, D., Gornik, E., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N.

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TIM, EMMI and 3D TCAD analysis of discrete-technology SCRs von Fleury, C., Notermans, G., Ritter, H.-M., Pogany, D.

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InAlN/GaN HEMTs: a first insight into technological optimization von Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.-F., Georgakilas, A., Pogany, D.

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Transient thermal characterization of AlGaN/GaN HEMTs grown on silicon von Kuzmik, J., Bychikhin, S., Neuburger, M., Dadgar, A., Krost, A., Kohn, E., Pogany, D.

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MOCVD of HfO2 and ZrO2 high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs von Abermann, S, Pozzovivo, G, Kuzmik, J, Strasser, G, Pogany, D, Carlin, J-F, Grandjean, N, Bertagnolli, E

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Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN–GaN metal oxide semiconductor high electron mobility transistors on Si substrates von Alexewicz, A., Ostermaier, C., Henkel, C., Bethge, O., Carlin, J.-F., Lugani, L., Grandjean, N., Bertagnolli, E., Pogany, D., Strasser, G.

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Low-frequency noise sources in as-prepared and aged GaN-based light-emitting diodes von Bychikhin, S., Pogany, D., Vandamme, L. K. J., Meneghesso, G., Zanoni, E.

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Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond von Kuzmik, J., Bychikhin, S., Pogany, D., Pichonat, E., Lancry, O., Gaquière, C., Tsiakatouras, G., Deligeorgis, G., Georgakilas, A.

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