Features of the electronic transport of topological semimetal PtSn4 and WTe2 single crystals von Perevalova, A. N., Naumov, S. V., Podgornykh, S. M., Marchenkova, E. B., Chistyakov, V. V., Huang, J. C. A., Marchenkov, V. V.

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Quantum Oscillations of Magnetoresistance in HgCdTe/HgTe/HgCdTe Heterostructures with Inverted Band Spectrum von Bogoliubskii, A. S., Gudina, S. V., Neverov, V. N., Turutkin, K. V., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

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Peculiarities of the electro- and magnetoresistivity of WTe2 and MoTe2 single crystals before and after quenching von Domozhirova, A. N., Naumov, S. V., Podgornykh, S. M., Marchenkova, E. B., Chistyakov, V. V., Huang, J. C. A., Marchenkov, V. V.

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Effects of spin polarization in the HgTe quantum well von Yakunin, M. V., Suslov, A. V., Podgornykh, S. M., Dvoretsky, S. A., Mikhailov, N. N.

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Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures von Gudina, S. V., Arapov, Yu. G., Ilchenko, E. V., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

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Features of Magnetotransport in a HgTe/CdHgTe Double Quantum Well with an Intermediate Degree of Band Inversion von Yakunin, M. V., Aleshkin, V. Ya, Podgornykh, S. M., Neverov, V. N., Popov, M. R., Mikhailov, N. N., Dvoretsky, S. A.

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Peculiarities of electronic transport in WTe2 single crystal von Marchenkov, V.V., Perevalova (Domozhirova), A.N., Naumov, S.V., Podgornykh, S.M., Marchenkova, E.B., Chistyakov, V.V., Huang, J.C.A.

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Kinetic Properties of a Topological Semimetal WTe2 Single Crystal von Perevalova, A. N., Naumov, S. V., Podgornykh, S. M., Chistyakov, V. V., Marchenkova, E. B., Fominykh, B. M., Marchenkov, V. V.

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Electro- and magnetotransport properties of a WTe2 single crystal von Domozhirova, A N, Naumov, S V, Podgornykh, S M, Marchenkova, E B, Chistyakov, V V, Semiannikova, A A, Huang, J C A, Marchenkov, V V

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On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width von Podgornykh, S. M., Yakunin, M. V., Krishtopenko, S. S., Popov, M. R., Mikhailov, N. N., Dvoretskii, S. A.

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Unconventional reentrant quantum Hall effect in a HgTe/CdHgTe double quantum well von Yakunin, M. V., Krishtopenko, S. S., Desrat, W., Podgornykh, S. M., Popov, M. R., Neverov, V. N., Dvoretsky, S. A., Mikhailov, N. N., Teppe, F., Jouault, B.

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Localization and interference induced quantum effects at low magnetic fields in InGaAs/GaAs structures von Savelyev, A. P., Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V.

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Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations von Neverov, V. N., Bogolubskii, A. S., Gudina, S. V., Podgornykh, S. M., Turutkin, K. V., Popov, M. R., Shelushinina, N. G., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

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On the experimental substantiation of the hybridization of electronic states on cobalt impurities in the conduction band of a crystal von Okulov, V. I., Al’shanskii, G. A., Lonchakov, A. T., Govorkova, T. E., Okulova, K. A., Podgornykh, S. M., Paranchich, L. D.

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HgTe/CdHgTe double quantum well with a spectrum of bilayer graphene and peculiarities of its magnetotransport von Yakunin, M. V., Krishtopenko, S. S., Podgornykh, S. M., Popov, M. R., Neverov, V. N., Mikhailov, N. N., Dvoretsky, S. A.

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Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures von Gudina, S. V., Arapov, Yu. G., Ilchenko, E. I., Neverov, V. N., Savelyev, A. P., Podgornykh, S. M., Shelushinina, N. G., Yakunin, M. V., Vasil’evskii, I. S., Vinichenko, A. N.

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Electron Effective Mass and g Factor in Wide HgTe Quantum Wells von Gudina, S. V., Neverov, V. N., Ilchenko, E. V., Bogolubskii, A. S., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

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Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure von Arapov, Yu. G., Gudina, S. V., Neverov, V. N., Podgornykh, S. M., Popov, M. R., Harus, G. I., Shelushinina, N. G., Yakunin, M. V., Dvoretsky, S. A., Mikhailov, N. N.

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Quantum Hall transitions in the presence of Landau levels mixing in n-InGaAs/InAlAs structures von Gudina, S V, Arapov, Yu G, Ilchenko, E V, Neverov, V N, Savelyev, A P, Podgornykh, S M, Shelushinina, N G, Yakunin, M V, Vasil'evskii, I S, Vinichenko, A N

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Activation transport under quantum Hall regime in HgTe-based heterostructure von Gudina, S. V., Neverov, V. N., Novik, E. G., Ilchenko, E. V., Harus, G. I., Shelushinina, N. G., Podgornykh, S. M., Yakunin, M. V., Mikhailov, N. N., Dvoretsky, S. A.

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