On the FinFET extension implant energy von Gossmann, H.-J.L., Agarwal, A., Parrill, T., Rubin, L.M., Poate, J.M.

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Implantation and transient boron diffusion: the role of the silicon self-interstitial von Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., Poate, J.M.

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon von Stolk, P. A., Gossmann, H.-J., Eaglesham, D. J., Jacobson, D. C., Rafferty, C. S., Gilmer, G. H., Jaraíz, M., Poate, J. M., Luftman, H. S., Haynes, T. E.

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The effect of carbon on diffusion in silicon von Stolk, P.A., Gossmann, H.-J., Eaglesham, D.J., Poate, J.M.

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Ion beams in silicon processing and characterization von Chason, E., Picraux, S. T., Poate, J. M., Borland, J. O., Current, M. I., Diaz de la Rubia, T., Eaglesham, D. J., Holland, O. W., Law, M. E., Magee, C. W., Mayer, J. W., Melngailis, J., Tasch, A. F.

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Atomistic calculations of ion implantation in Si: Point defect and transient enhanced diffusion phenomena von Jaraiz, M., Gilmer, G. H., Poate, J. M., de la Rubia, T. D.

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High energy ion implantation for profiled tub formation and impurity gettering in deep submicron CMOS technology von Jacobson, D.C., Kamgar, A., Eaglesham, D.J., Lloyd, E.J., Hillenius, S.J., Poate, J.M.

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High speed crystal growth and solidification using laser heating von Poate, J.M.

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Amorphous Si — the role of MeV implantation in elucidating defect and thermodynamic properties von Poate, J.M., Coffa, S., Jacobson, D.C., Polman, A., Roth, J.A., Olson, G.L., Roorda, S., Sinke, W., Custer, J.S., Thompson, M.O., Spaepen, F., Donovan, E.

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The interstitial fraction of diffusivity of common dopants in Si von Gossmann, H.-J., Haynes, T. E., Stolk, P. A., Jacobson, D. C., Gilmer, G. H., Poate, J. M., Luftman, H. S., Mogi, T. K., Thompson, M. O.

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Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon von Haynes, T. E., Eaglesham, D. J., Stolk, P. A., Gossmann, H.-J., Jacobson, D. C., Poate, J. M.

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Interstitial defects in silicon from 1–5 keV Si+ ion implantation von Agarwal, Aditya, Haynes, Tony E., Eaglesham, David J., Gossmann, Hans-J., Jacobson, Dale C., Poate, John M., Erokhin, Yu. E.

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Iron gettering mechanisms in silicon von Benton, J. L., Stolk, P. A., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Ha, N. T., Haynes, T. E., Myers, S. M.

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Transient enhanced diffusion of Sb and B due to MeV silicon implants von Eaglesham, D. J., Haynes, T. E., Gossmann, H.-J., Jacobson, D. C., Stolk, P. A., Poate, J. M.

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The effects of nucleation and growth on epitaxy in the CoSi2/Si system von Gibson, J.M., Bean, J.C., Poate, J.M., Tung, R.T.

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Implant damage and transient enhanced diffusion in Si von Eaglesham, D.J., Stolk, P.A., Gossmann, H.-J., Haynes, T.E., Poate, J.M.

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Transient enhanced diffusion from decaborane molecular ion implantation von Agarwal, Aditya, Gossmann, H.-J., Jacobson, D. C., Eaglesham, D. J., Sosnowski, M., Poate, J. M., Yamada, I., Matsuo, J., Haynes, T. E.

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Melting temperature and explosive crystallization of amorphous silicon during pulsed laser irradiation von THOMPSON, M. O, GALVIN, G. J, MAYER, J. W, PEERCY, P. S, POATE, J. M, JACOBSON, D. C, CULLIS, A. G, CHEW, N. G

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The mechanism of iron gettering in boron-doped silicon von Stolk, P. A., Benton, J. L., Eaglesham, D. J., Jacobson, D. C., Cheng, J.-Y., Poate, J. M., Myers, S. M., Haynes, T. E.

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Structural and compositional changes in ion-bombarded Ta2O5 von Murti, D.K., Kelly, Roger, Liau, Z.L., Poate, J.M.

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