LaAlO3/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties von Pelloquin, Sylvain, Saint-Girons, Guillaume, Baboux, Nicolas, Albertini, David, Hourani, Waël, Penuelas, Jose, Grenet, Geneviève, Plossu, Carole, Hollinger, Guy

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LaAlO 3 /Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties von Pelloquin, Sylvain, Saint-Girons, Guillaume, Baboux, Nicolas, Albertini, David, Hourani, Wael, Penuelas, Jose, Grenet, Geneviève, Plossu, Carole, Hollinger, Guy

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LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties von Pelloquin, Sylvain, Baboux, Nicolas, Albertini, David, Hourani, Waeel, Plossu, Carole, Saint-Girons, Guillaume, Penuelas, Jose, Grenet, Genevieve, Hollinger, Guy

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An efficient and simple compact modeling approach for 3-D interconnects with IC's stack global electrical context consideration von Lorival, Jean-Etienne, Calmon, Francis, Sun, Fengyuan, Frantz, Felipe, Plossu, Carole, Berre, Martine Le, O'Connor, Ian, Valorge, Olivier, Charbonnier, Jean, Henry, David, Gontrand, Christian

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An efficient and simple compact modeling approach for 3-D interconnects with IC׳s stack global electrical context consideration von Lorival, Jean-Etienne, Calmon, Francis, Sun, Fengyuan, Frantz, Felipe, Plossu, Carole, Le Berre, Martine, O’Connor, Ian, Valorge, Olivier, Charbonnier, Jean, Henry, David, Gontrand, Christian

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3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radiofrequency circuits von Gontrand, Christian, Sun, Fengyuan, Cardenas, R., Ma, P., Plossu, Carole, Calmon, Francis, Nunez Perez, J., Verdier, Jacques

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3D substrate modeling; from a first order electrical analysis, towards some possible signal fluctuations consideration, for radio frequency circuits von Gontrand, Christian, Sun, Fengyuan, Ricardo Cardenas-Valdez, José, Ma, Yue, Plossu, Carole, Calmon, Francis, Cruz Nuñez-Perez, José, Verdier, Jacques

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A comparison of SiSiO 2 interface trap properties in thin-film transistors with thermal and plasma nitrided oxides von Autran, Jean-Luc, Plossu, Carole, Seigneur, Frédéric, Balland, Bernard, Straboni, Alain

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Etude et modélisation des courants tunnels : application aux mémoires non volatiles von Chiquet, Philippe

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A comparison of Si-SiO2 interface trap properties in thin-film transistors with thermal and plasma nitrided oxides von AUTRAN, J.-L, PLOSSU, C, SEIGNEUR, F, BALLAND, B, STRABONI, A

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