Growth temperature dependence of epitaxial Gd2O3 films on Si( 1 1 1 ) von NIU, G, VILQUIN, B, BABOUX, N, PLOSSU, C, BECERRA, L, SAINT-GRIONS, G, HOLLINGER, G

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Accurate electron mobility extraction in nMOSFETs by RF split CV von Hyvert, G., Calmon, F., Nguyen, T., Poncet, A., Plossu, C.

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Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct a... von Burignat, S., Plossu, C., Boivin, P.

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Peculiarities of electron tunnel injection to the drain of EEPROMs von Baboux, N., Busseret, C., Plossu, C., Boivin, P.

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Molecular beam deposition of LaAlO3 on silicon for sub-22 nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface von PELLOQUIN, S, BECERRA, L, SAINT-GIRONS, G, PLOSSU, C, BABOUX, N, ALBERTINI, D, GRENET, G, HOLLINGER, G

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A new technique to characterize endurance of EEPROM tunnel oxides von Baboux, N., Plossu, C., Boivin, P.

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Impact of temperature on non-equilibrium Fowler-Nordheim EEPROM programming von Baboux, N., Plossu, C., Boivin, P., Mirabel, J.M.

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Dynamic Fowler–Nordheim injection in EEPROM tunnel oxides at realistic time scales von Baboux, N., Plossu, C., Boivin, P.

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A new structure to monitor electrical transients during programming of EEPROM memory cells von BABOUX, N, PLOSSU, C, BOIVIN, P

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Parameters extraction of hafnium based gate oxide capacitors von Nguyen, T., Busseret, C., Militaru, L., Poncet, A., Aimé, D., Baboux, N., Plossu, C.

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A new dynamic gate capacitance measurement protocol to evaluate integrated high-voltage devices' switching loss performances in power management applications von Grelu, C., Baboux, N., Bianchi, R.A., Plossu, C.

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Quantitative study of charge trapping in SiO2 during bipolar Fowler-Nordheim injection von BUSSERET, C, BABOUX, N, PLOSSU, C, BURIGNAT, S, BOIVIN, P

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EEPROM programming window changes with operating temperature von Baboux, N., Plossu, C., Boivin, P., Mirabel, J.-M.

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Towards a model linking tunnel oxide degradation to programming window closure in EEPROM cells von Baboux, N., Busseret, C., Plossu, C., Burignat, S., Balland, B., Boivin, P.

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Capacitance and current-voltage simulation of EEPROM technology highly doped MOS structures von CROCI, S, PLOSSU, C, BURIGNAT, S, BOIVIN, P

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Model of leakage current induced by dynamic stress in thin EEPROM tunnel oxides von Sorbier, J.P., Croci, S., Imbert, B., Plossu, C.

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A study on mobility degradation in nMOSFETs with HfO2 based gate oxide von Hyvert, G., Nguyen, T., Militaru, L., Poncet, A., Plossu, C.

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Nanoscale leakage current measurements in metal organic chemical vapor deposition crystalline SrTiO3 films von Rozier, Y., Gautier, B., Hyvert, G., Descamps, A., Plossu, C., Dubourdieu, C., Ducroquet, F.

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Improvement of EEPROM cell reliability by optimization of signal programming von Canet, P., Bouchakour, R., Harabech, N., Boivin, Ph, Mirabel, J.M., Plossu, C.

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Effect of some technological parameters on Fowler–Nordheim injection through tunnel oxides for non-volatile memories von Croci, S., Plossu, C., Balland, B., Raynaud, C., Boivin, Ph

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