Matrix addressing for organic electroluminescent displays von Pribat, D., Plais, F.

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Compact analytical physical-based model of LTPS TFT for active matrix displays addressing circuits simulation and design von Benzarti, W., Plais, F., De Luca, A., Pribat, D.

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Analysis of electrical characteristics of polycrystalline silicon thin-film transistors under static and dynamic conditions von Valdinoci, M., Colalongo, L., Baccarani, G., Pecora, A., Policicchio, I., Fortunato, G., Plais, F., Legagneux, P., Reita, C., Pribat, D.

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Noise performances in polycrystalline silicon thin-film transistors fabricated by excimer laser crystallization von Carluccio, R., Corradetti, A., Fortunato, G., Reita, C., Legagneux, P., Plais, F., Pribat, D.

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Addressing of Organic Electroluminescent Displays von Plais, F., Pribat, Didier

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Low temperature polysilicon TFTs: a comparison of solid phase and laser crystallization von Plais, F., Legagneux, P., Reita, C., Huet, O., Petinot, F., Pribat, D., Godard, B., Stehlé, M., Fogarassy, E.

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Surface melt dynamics and super lateral growth regime in long pulse duration excimer laser crystallization of amorphous Si films von Fogarassy, E, de Unamuno, S, Legagneux, P, Plais, F, Pribat, D, Godard, B, Stehle, M

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Determination of excess current due to impact ionization in polycrystalline silicon thin-film transistors von Policicchio, I., Pecora, A., Carluccio, R., Mariucci, L., Fortunato, G., Plais, F., Pribat, D.

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LOW-TEMPERATURE DEPOSITION OF SIO2 BY DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION von PLAIS, F, AGIUS, B, ABEL, F, SIEJKA, J, PUECH, M, RAVEL, G, ALNOT, P, PROUST, N

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Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors von Giovannini, S., Carluccio, R., Mariucci, L., Pecora, A., Fortunato, G., Reita, C., Plais, F., Pribat, D.

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Electrical properties of distributed electron cyclotron resonance plasma-deposited SiO2-InP diodes von PLAIS, F, AGIUS, B, PROUST, N, CASSETTE, S, RAVEL, G, PUECH, M

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Leakage current reduction due to hot carrier effects in n-channel polycrystalline silicon thin film transistors von Tallarida, G., Pecora, A., Fortunato, G., Plais, F., Legagneux, P., Kretz, T., Pribat, D.

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Surface analysis to study the improvements of silicon nitride/gallium arsenide interface properties von Cassette, S., Plais, F., Olivier, J.

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Influence of Insulator-Deposited Wall on Plasma Bias Characteristics von Nan, Jiang, Plais, F

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Kinetics of interface state generation induced by hot carriers in N-channel polycrystalline silicon thin-film transistors von FORTUNATO, G, PECORA, A, POLICICCHIO, I, PLAIS, F, PRIBAT, D

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Single crystalline silicon thin film transistors fabricated on Corning 7059 von Plais, F., Huet, O., Legagneux, P., Pribat, D., Auberton-Herve, A.J., Barge, T.

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DEVICE QUALITY SIO2 DEPOSITED BY DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION WITHOUT SUBSTRATE HEATING von JIANG, N, HUGON, MC, AGIUS, B, KRETZ, T, PLAIS, F, PRIBAT, D, CARRIERE, T, PUECH, M

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Kinetics of crystallization of amorphous and mixed-phase silicon films deposited by pyrolysis of disilane gas at very low pressure von KRETZ, T, PRIBAT, D, LEGAGNEUX, P, PLAIS, F, HUET, O, BISARO, R

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Frequency, energy and spatially resolved characterization of interface traps in metal-insulator-InP transistors based on noise and current drift measurements von Viktorovitch, P., Vojtek, J., Thomas, J., Choujaa, K., Tardy, J., Blanchet, R., Agius, B., Plais, F., Chovet, A.

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