Zn diffusion depth effect on photoresponse uniformity in InP/InGaAs avalanche photodiodes von Walker, A. W., Moisa, S., Springthorpe, A. J., Pitts, O. J.

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Edge Breakdown Suppression of Avalanche Photodiodes Using Zn Diffusion and Selective Area Growth von Salehzadeh, O., Bonneville, G., Pitts, O. J., Springthorpe, A. J.

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Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes von Pitts, O.J., Hisko, M., Benyon, W., Raymond, S., SpringThorpe, A.J.

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Modeling and process control of MOCVD growth of InAlGaAs MQW structures on InP von Pitts, O.J., Benyon, W., SpringThorpe, A.J.

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Minority carrier diffusion in InGaAs/InP P–i–N heterojunctions for photodetector arrays von Walker, A. W., Pitts, O. J., Storey, C., Waldron, P., Flueraru, C.

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Multiwafer zinc diffusion in an OMVPE reactor von Pitts, O.J., Benyon, W., Goodchild, D., SpringThorpe, A.J.

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Planar avalanche photodiodes with edge breakdown suppression using a novel selective area growth based process von Pitts, O.J., Hisko, M., Benyon, W., Bonneville, G., Storey, C., SpringThorpe, A.J.

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Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications von Lackner, D., Pitts, O.J., Najmi, S., Sandhu, P., Kavanagh, K.L., Yang, A., Steger, M., Thewalt, M.L.W., Wang, Y., McComb, D.W., Bolognesi, C.R., Watkins, S.P.

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Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications von Pitts, O.J., Lackner, D., Cherng, Y.T., Watkins, S.P.

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Numerical optimization of an optical showerhead reactor design for organometallic vapor phase epitaxy von Guo, Y., Pitts, O.J., Jiang, W.Y., Watkins, S.P.

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In-place bonding of GaAs/InGaAs/GaAs heterostructures to GaAs (0 0 1) von Owen, D L, Lackner, D, Pitts, O J, Watkins, S P, Mooney, P M

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Heavily carbon-doped GaAsSb grown on InP for HBT applications von Watkins, S.P., Pitts, O.J., Dale, C., Xu, X.G., Dvorak, M.W., Matine, N., Bolognesi, C.R.

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Antimony segregation in GaAs-based multiple quantum well structures von Pitts, O.J, Watkins, S.P, Wang, C.X, Fink, V, Kavanagh, K.L

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Obesity dysregulates the pulmonary antiviral immune response von Almond, M, Jackson, M, Jha, A, Katosulis, O, Pitts, O, Tunstall, T, Regis, E, Dunning, J, Byrne, A, Mallia, P, Kon, OM, Saunders, K, Karen, S, Snelgrove, R, Openshaw, P, Edwards, M, Barclay, W, Heaney, L, Johnston, S, Singanayagam, A

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InAs/InAsSb strain balanced superlattices for optical detectors: Material properties and energy band simulations von Lackner, D., Steger, M., Thewalt, M. L. W., Pitts, O. J., Cherng, Y. T., Watkins, S. P., Plis, E., Krishna, S.

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RDS characterization of GaAsSb and GaSb grown by MOVPE von Pitts, O.J., Watkins, S.P., Wang, C.X.

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Time-resolved reflectance difference spectroscopy study of Sb- and As-terminated InP(1 0 0) surfaces von Wang, C.X., Pitts, O.J., Watkins, S.P.

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Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE von Pitts, O.J., Watkins, S.P., Wang, C.X., Stotz, J.A.H., Meyer, T.A., Thewalt, M.L.W.

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Intravenous sodium nitrite in acute ST-elevation myocardial infarction: a randomized controlled trial (NIAMI) von Siddiqi, Nishat, Neil, Christopher, Bruce, Margaret, MacLennan, Graeme, Cotton, Seonaidh, Papadopoulou, Sofia, Feelisch, Martin, Bunce, Nicholas, Lim, Pitt O., Hildick-Smith, David, Horowitz, John, Madhani, Melanie, Boon, Nicholas, Dawson, Dana, Kaski, Juan Carlos, Frenneaux, Michael

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Strain balanced InAs/InAsSb superlattice structures with optical emission to 10 μm von Lackner, D., Pitts, O. J., Steger, M., Yang, A., Thewalt, M. L. W., Watkins, S. P.

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