The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition von D. Dupuis, Russell, Pinzone, C.J.

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Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates von VAN DER ZIEL, J. P, DUPUIS, R. D, LOGAN, R. A, PINZONE, C. J

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Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates von VAN DER ZIEL, J. P, DUPUIS, R. D, LOGAN, R. A, MIKULYAK, R. M, PINZONE, C. J, SAVAGE, A

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Si/InGaAs ultralow dark current wafer bonded photodetectors von Levine, B.F., Pinzone, C.J., Hui, S., King, C.A., Leibenguth, R.E.

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Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition von DUPUIS, R. D, VAN DER ZIEL, J. P, LOGAN, R. A, BROWN, J. M, PINZONE, C. J

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Room-temperature photopumped operation of an InGaAs-InP vertical cavity surface-emitting laser von DEPPE, D. G, SINGH, S, DUPUIS, R. D, GERRARD, N. D, ZYDZIK, G. J, VAN DER ZIEL, J. P, GREEN, C. A, PINZONE, C. J

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In 0.47Ga 0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength von Dupuis, R.D., Deppe, D.G., Pinzone, C.J., Gerrard, N.D., Singh, S., Zydzik, G.J., van der Ziel, J.P., Green, C.A.

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In0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength von Dupuis, R.D., Deppe, D.G., Pinzone, C.J., Gerrard, N.D., Singh, S., Zydzik, G.J., van der Ziel, J.P., Green, C.A.

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Very Smooth AiGaAs/GaAs Quantum-wells Grown By Metalorganic Chemical Vapor Disposition von Dupuis, R.D., Neff, J.G., Pinzone, C.J.

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Very Smooth AIGaAs-GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition von Dupuis, R.D., Neff, J.G., Pinzone, C.J.

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