Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs von Chung, J.W., Roberts, J.C., Piner, E.L., Palacios, T.

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Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications von Saadat, O.I., Chung, J.W., Piner, E.L., Palacios, T.

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N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology von Chung, J.W., Piner, E.L., Palacios, T.

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Schottky-Drain Technology for AlGaN/GaN High-Electron Mobility Transistors von Bin Lu, Piner, E.L., Palacios, T.

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12 W/mm AlGaN-GaN HFETs on silicon substrates von Johnson, J.W., Piner, E.L., Vescan, A., Therrien, R., Rajagopal, P., Roberts, J.C., Brown, J.D., Singhal, S., Linthicum, K.J.

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Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs von Chung, J.W., Jae-kyu Lee, Piner, E.L., Palacios, T.

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DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration von Wu Lu, Kumar, V., Piner, E.L., Adesida, I.

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Growth and characterization of In-based nitride compounds von Bedair, S.M., McIntosh, F.G., Roberts, J.C., Piner, E.L., Boutros, K.S., El-Masry, N.A.

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies von Tirelli, S., Marti, D., Haifeng Sun, Alt, A.R., Benedickter, H., Piner, E.L., Bolognesi, C.R.

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Wireless Detection System for Glucose and pH Sensing in Exhaled Breath Condensate Using AlGaN/GaN High Electron Mobility Transistors von Byung Hwan Chu, Kang, B.S., Chang, C.Y., Ren, F., Goh, A., Sciullo, A., Wu, W., Lin, J., Gila, B.P., Pearton, S.J., Johnson, J.W., Piner, E.L., Linthicum, K.J.

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AlGaN/GaN Dual-Channel Lateral Field-Effect Rectifier With Punchthrough Breakdown Immunity and Low On-Resistance von Chunhua Zhou, Wanjun Chen, Piner, E.L., Chen, K.J.

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AlGaN/GaN lateral field-effect rectifier with intrinsic forward current limiting capability von Zhou, C., Chen, W., Piner, E.L., Chen, K.J.

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Reliability of large periphery GaN-on-Si HFETs von Singhal, S., Li, T., Chaudhari, A., Hanson, A.W., Therrien, R., Johnson, J.W., Nagy, W., Marquart, J., Rajagopal, P., Roberts, J.C., Piner, E.L., Kizilyalli, I.C., Linthicum, K.J.

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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane von Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

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Epitaxial deposition of GaInN and InN using the rotating susceptor ALE system von McIntosh, F.G, Piner, E.L, Roberts, J.C, Behbehani, M.K, Aumer, M.E, El-Masry, N.A, Bedair, S.M

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Role of Gate Oxide in AlGaN/GaN High-Electron-Mobility Transistor pH Sensors von Kang, B.S., Wang, H.T., Ren, F., Hlad, M., Gila, B.P., Abernathy, C.R., Pearton, S.J., Li, C., Low, Z.N., Lin, J., Johnson, J.W., Rajagopal, P., Roberts, J.C., Piner, E.L., Linthicum, K.J.

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Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment von Bin Lu, Saadat, O.I., Piner, E.L., Palacios, T.

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Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs von Chung, J.W., Lee, J., Piner, E.L., Palacios, T.

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c-erbB-2 Sensing Using AlGaN/GaN High Electron Mobility Transistors For Breast Cancer Detection von Chen, Ke-Hung, Kang, Byoung Sam, Wang, H. T., Lele, T.P., Ren, F, Wang, Y.L., Chang, C.Y., Pearton, Stephen J., Dennis, D. M., Johnson, J. W., Rajagopal, P., Roberts, J.C., Piner, E.L., Linthicum, K.J.

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AlGaN/GaN High Electron Mobility Transistors integrated into Wireless Detection System for Glucose and pH in Exhaled Breath Condensate von Chu, Byung Hwan, Kang, Byoung Sam, Chang, C.Y., Ren, F, Goh, Aik, Sciullo, Andrew, Wu, Wenhsing, Lin, Jenshan, Gila, Brent P., Pearton, Stephen J., Johnson, J. W., Piner, E.L., Linthicum, K.J.

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