Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation von Scandurra, Antonino, Ragonese, Paolo, Calabretta, Cristiano, Zahra, Khadisha, Soomary, Liam, Roccaforte, Fabrizio, Greco, Giuseppe, Piluso, Nicolò, Eloisa Castagna, Maria, Iucolano, Ferdinando, Severino, Andrea, Bruno, Elena, Mirabella, Salvo

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Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping von Lorenti, Simona, Severino, Andrea, Anzalone, Ruggero, Coffa, Salvo, Arena, Giuseppe, Piluso, Nicolo

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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching von Severino, Andrea, Coffa, Salvo, Piluso, Nicolo, Anzalone, Ruggero

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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis von Coffa, Salvo, Rinaldi, Stefania, Bassi, Anna, Piluso, Nicolo, Lorenti, Simona, Severino, Andrea

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SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications von Tudisco, Salvatore, La Via, Francesco, Agodi, Clementina, Altana, Carmen, Borghi, Giacomo, Boscardin, Maurizio, Bussolino, Giancarlo, Calcagno, Lucia, Camarda, Massimo, Cappuzzello, Francesco, Carbone, Diana, Cascino, Salvatore, Casini, Giovanni, Cavallaro, Manuela, Ciampi, Caterina, Cirrone, Giuseppe, Cuttone, Giacomo, Fazzi, Alberto, Giove, Dario, Gorini, Giuseppe, Labate, Luca, Lanzalone, Gaetano, Litrico, Grazia, Longo, Giuseppe, Lo Presti, Domenico, Mauceri, Marco, Modica, Roberto, Moschetti, Maurizio, Muoio, Annamaria, Musumeci, Franco, Pasquali, Gabriele, Petringa, Giada, Piluso, Nicolò, Poggi, Giacomo, Privitera, Stefania, Puglia, Sebastiana, Puglisi, Valeria, Rebai, Marica, Ronchin, Sabina, Santangelo, Antonello, Stefanini, Andrea, Trifirò, Antonio, Zimbone, Massimo

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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test von Coffa, Salvo, Anzalone, Ruggero, Severino, Andrea, Piluso, Nicolo, Carbone, Beatrice, Russo, Alfio, Vitanza, Elisa

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Thermal Annealing of High Dose P Implantation in 4H-SiC von Lorenti, Simona, di Stefano, Maria Ausilia, Calabretta, Cristiano, Boninelli, Simona, Severino, Andrea, Calcagno, Lucia, Piluso, Nicolo, Zimbone, Massimo, La Via, Francesco, Barbagiovanni, Eric G.

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Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements von Privitera, Stefania M. S., Litrico, Grazia, Camarda, Massimo, Piluso, Nicolò, La Via, Francesco

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Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements von Privitera, Stefania, Litrico, Grazia, La Via, Francesco, Camarda, Massimo, Piluso, Nicolo

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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate von Litrico, Grazia, Coffa, Salvo, La Via, Francesco, Arena, Giuseppe, Anzalone, Ruggero, Piluso, Nicolo, Lorenti, Simona

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High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process von Severino, Andrea, Coffa, Salvo, La Via, Francesco, Arena, Giuseppe, Campione, Alberto, Piluso, Nicolo, Lorenti, Simona

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Ion Implantation Defects in 4H-SiC DIMOSFET von Lorenti, Simona, La Via, Francesco, Russo, Alfio, Coffa, Salvo, Piluso, Nicolo, Fontana, Enzo, Marcellino, Cinzia M.

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Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET von Severino, Andrea, Camalleri, Marco, di Stefano, Maria Ausilia, Arena, Giuseppe, Piluso, Nicolo, Cordiano, Francesco

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Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers von Severino, Andrea, Roccaforte, Fabrizio, Fiorenza, Patrick, Arena, Giuseppe, Boninelli, Simona, Mello, Domenico, Giannazzo, Filippo, Calcagno, Lucia, Piluso, Nicolo, Calabretta, Cristiano

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Current-induced defect formation in multi-walled carbon nanotubes von Scuderi, Viviana, Tripodi, Lisa, Piluso, Nicolò, Bongiorno, Corrado, Di Franco, Salvatore, Scalese, Silvia

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Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device von Lorenti, Simona, Anzalone, Ruggero, Coffa, Salvo, Salanitri, Marco, Arena, Giuseppe, Piluso, Nicolo

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Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer von Severino, Andrea, Fiorenza, Patrick, Salanitri, Marco, La Via, Francesco, di Stefano, Maria Ausilia, Anzalone, Ruggero, Campione, Alberto, Fontana, Enzo, Piluso, Nicolo, Lorenti, Simona

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4H-SiC Defects Evolution by Thermal Processes von Lorenti, Simona, di Stefano, Maria Ausilia, Piluso, Nicolo, La Via, Francesco

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Correlations between Crystal Quality and Electrical Properties by Means of Simultaneous Photoluminescence and Photocurrent Analysis von Privitera, Stefania, La Via, Francesco, Anzalone, Ruggero, Camarda, Massimo, Piluso, Nicolò

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Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate von La Via, Francesco, D’Arrigo, Giuseppe, Severino, Andrea, Piluso, Nicolò, Mauceri, Marco, Locke, Christopher, Saddow, Stephen E.

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