Detection of crystallographic defects in 3C-SiC by micro-Raman and micro-PL analysis von Litrico, Grazia, Piluso, Nicolò, La Via, Francesco

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Investigation of the Young's Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates von Ben Messaoud, Jaweb, Michaud, Jean-François, Certon, Dominique, Camarda, Massimo, Piluso, Nicolò, Colin, Laurent, Barcella, Flavien, Alquier, Daniel

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Two-dimensional electron gas isolation mechanism in Al0.2Ga0.8N/GaN heterostructure by low-energy Ar, C, Fe ion implantation von Scandurra, Antonino, Ragonese, Paolo, Calabretta, Cristiano, Zahra, Khadisha, Soomary, Liam, Roccaforte, Fabrizio, Greco, Giuseppe, Piluso, Nicolò, Eloisa Castagna, Maria, Iucolano, Ferdinando, Severino, Andrea, Bruno, Elena, Mirabella, Salvo

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Dislocations Propagation Study Trough High-Resolution 4H-SiC Substrate Mapping von Lorenti, Simona, Anzalone, Ruggero, Piluso, Nicolo, Severino, Andrea, Arena, Giuseppe, Coffa, Salvo

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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching von Anzalone, Ruggero, Piluso, Nicolo, Severino, Andrea, Coffa, Salvo

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An Approach to Predict 4H-SiC Wafer Bending after Back Side Thinning by Substrate Resistivity Analysis von Severino, Andrea, Coffa, Salvo, Bassi, Anna, Piluso, Nicolo, Rinaldi, Stefania, Lorenti, Simona

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SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications von Tudisco, Salvatore, La Via, Francesco, Agodi, Clementina, Altana, Carmen, Borghi, Giacomo, Boscardin, Maurizio, Bussolino, Giancarlo, Calcagno, Lucia, Camarda, Massimo, Cappuzzello, Francesco, Carbone, Diana, Cascino, Salvatore, Casini, Giovanni, Cavallaro, Manuela, Ciampi, Caterina, Cirrone, Giuseppe, Cuttone, Giacomo, Fazzi, Alberto, Giove, Dario, Gorini, Giuseppe, Labate, Luca, Lanzalone, Gaetano, Litrico, Grazia, Longo, Giuseppe, Lo Presti, Domenico, Mauceri, Marco, Modica, Roberto, Moschetti, Maurizio, Muoio, Annamaria, Musumeci, Franco, Pasquali, Gabriele, Petringa, Giada, Piluso, Nicolò, Poggi, Giacomo, Privitera, Stefania, Puglia, Sebastiana, Puglisi, Valeria, Rebai, Marica, Ronchin, Sabina, Santangelo, Antonello, Stefanini, Andrea, Trifirò, Antonio, Zimbone, Massimo

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Structural Characterization of Heteroepitaxial 3C-SiC von Severino, Andrea, Anzalone, Ruggero, La Via, Francesco, Camarda, Massimo, Piluso, Nicolò

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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test von Carbone, Beatrice, Severino, Andrea, Piluso, Nicolo, Anzalone, Ruggero, Vitanza, Elisa, Coffa, Salvo, Russo, Alfio

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Thermal Annealing of High Dose P Implantation in 4H-SiC von Calabretta, Cristiano, Lorenti, Simona, Zimbone, Massimo, Piluso, Nicolo, di Stefano, Maria Ausilia, Boninelli, Simona, Calcagno, Lucia, Barbagiovanni, Eric G., Severino, Andrea, La Via, Francesco

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Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements von Privitera, Stefania M. S., Litrico, Grazia, Camarda, Massimo, Piluso, Nicolò, La Via, Francesco

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Stress Relaxation Mechanism after Thinning Process on 4H-SiC Substrate von Litrico, Grazia, Piluso, Nicolo, Lorenti, Simona, Coffa, Salvo, La Via, Francesco, Anzalone, Ruggero, Arena, Giuseppe

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High Quality 4H-SiC Epitaxial Layer by Tuning CVD Process von Piluso, Nicolo, Lorenti, Simona, Severino, Andrea, Coffa, Salvo, La Via, Francesco, Campione, Alberto, Arena, Giuseppe

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Electrical Properties of Defects in 4H-SiC Investigated by Photo-Induced-Currents Measurements von Camarda, Massimo, Privitera, Stefania, La Via, Francesco, Piluso, Nicolo, Litrico, Grazia

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Study of the Post-Oxidation-Annealing (POA) Process on Deposited High-Temperature Oxide (HTO) Layers as Gate Dielectric in SiC MOSFET von di Stefano, Maria Ausilia, Piluso, Nicolo, Severino, Andrea, Camalleri, Marco, Cordiano, Francesco, Arena, Giuseppe

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Ion Implantation Defects in 4H-SiC DIMOSFET von Lorenti, Simona, Russo, Alfio, Piluso, Nicolo, La Via, Francesco, Marcellino, Cinzia M., Fontana, Enzo, Coffa, Salvo

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Effects of Thermal Annealing Processes in Phosphorous Implanted 4H-SiC Layers von Calcagno, Lucia, Roccaforte, Fabrizio, Piluso, Nicolo, Severino, Andrea, Giannazzo, Filippo, Boninelli, Simona, Mello, Domenico, Arena, Giuseppe, Fiorenza, Patrick, Calabretta, Cristiano

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Hydrogen Etching Influence on 4H-SiC Homo-Epitaxial Layer for High Power Device von Lorenti, Simona, Coffa, Salvo, Anzalone, Ruggero, Piluso, Nicolo, Salanitri, Marco, Arena, Giuseppe

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Current-induced defect formation in multi-walled carbon nanotubes von Scuderi, Viviana, Tripodi, Lisa, Piluso, Nicolò, Bongiorno, Corrado, Di Franco, Salvatore, Scalese, Silvia

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Growth of 4H-SiC Epitaxial Layer through Optimization of Buffer Layer von Salanitri, Marco, di Stefano, Maria Ausilia, Piluso, Nicolo, Lorenti, Simona, Fiorenza, Patrick, Severino, Andrea, La Via, Francesco, Anzalone, Ruggero, Campione, Alberto, Fontana, Enzo

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