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    Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond

    Improvement of the tail component in retention time distribution using buffered n-implantation with tilt and rotation (BNITR) for 0.2 um DRAM cell and beyond von Ilgweon Kim, Namsung Kim, Hyuckchai Jung, Hoyup Kwon, Seunghan Ok, Jongmin Kim, Pilbo Sim, Jooseog Park, Daeyoung Park, Sungho Jang

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