Evolution of light-current characteristic shape in high-power semiconductor quantum well lasers von Sokolova, Z.N, Pikhtin, N.A, Asryan, L.V

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Method for determination of capture velocity of charge carriers into quantum well in semiconductor laser von Sokolova, Z.N, Bakhvalov, K.V, Lyutetskiy, A.V, Pikhtin, N.A, Tarasov, I.S, Asryan, L.V

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Quantum-cascade lasers of mid-IR spectral range: epitaxy, diagnostics and device characteristics von Babichev, A.V., Gladyshev, A.G., Kolodeznyi, E.S., Kurochkin, A.S., Sokolovskii, G.S., Bougrov, V.E., Karachinsky, L. Ya, Novikov, I. I., Dudelev, V.V., Nevedomsky, V.N., Slipchenko, S.O., Lutetskiy, A.V., Sofronov, A.N., Firsov, D.A., Vorobjev, L.E., Pikhtin, N.A., Bousseksou, A., Egorov, A. Yu

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Implementation of energy barrier layers for 1550 nm high-power laser diodes von Veselov, D.A., Pikhtin, N.A., Slipchenko, S.O., Kirichenko, I.K., Podoskin, A.A., Shuvalova, N.V., Rudova, N.A., Vavilova, L.S., Rastegaeva, M.G., Bagaev, T.A., Svetogorov, V.N., Padalitsa, A.A., Ryaboshtan, Yu.L., Ladugin, M.A., Marmalyuk, A.A.

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Structural-spectroscopic study of epitaxial GaAs layers grown on compliant substrates based on a superstructural layer and protoporous silicon von Seredin, P.V., Goloshchapov, D.L., Arsentyev, I.N., Nikolayev, D.N., Pikhtin, N.A., Slipchenko, S.O., Leiste, Harald, Prutskij, Tatiana

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Analysis of light – current characteristics of high-power semiconductor lasers (1060 nm) in a steady-state 2D model von Slipchenko, S.O., Golovin, V.S., Soboleva, O.S., Lamkin, I.A., Pikhtin, N.A.

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Design and optimization of high-contrast gratings for multispectral VCSEL-SOI laser sources von Shashkin, I.S., Kondratov, M.I., Grishin, A.E., Pevchikh, K.E., Slipchenko, S.O., Pikhtin, N.A.

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High-power quasi-cw semiconductor lasers (1060 nm) with an ultra-wide emitting aperture von Slipchenko, S.O., Romanovich, D.N., Kapitonov, V.A., Bakhvalov, K.V., Pikhtin, N.A., Kop’ev, P.S.

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures von Gavrina, P S, Podoskin, A A, Fomin, E V, Veselov, D A, Shamakhov, V V, Slipchenko, S O, Pikhtin, N A, Kop'ev, P S

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Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm von Slipchenko, S.O., Podoskin, A.A., Veselov, D.A., Efremov, L.S., Zolotarev, V.V., Kazakova, A.E., Kop’ev, P.S., Pikhtin, N.A.

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High-power mesa-stripe semiconductor lasers (910 nm) with an ultra-wide emitting aperture based on tunnel-coupled InGaAs/AlGaAs/GaAs heterostructures von Slipchenko, S.O., Romanovich, D.N., Gavrina, P.S., Veselov, D.A., Bagaev, T.A., Ladugin, M.A., Marmalyuk, A.A., Pikhtin, N.A.

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Longitudinal spatial hole burning in high-power semiconductor lasers: numerical analysis von Golovin, V.S., Shashkin, I.S., Slipchenko, S.O., Pikhtin, N.A., Kop'ev, P.S.

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Semiconductor AlGaInAs/InP lasers (λ = 1450 - 1500 nm) with a strongly asymmetric waveguide von Volkov, N A, Andreev, A Yu, Yarotskaya, I V, Ryaboshtan, Yu L, Svetogorov, V N, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Slipchenko, S O, Lyutetskii, A V, Veselov, D A, Pikhtin, N A

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Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures von Bobretsova, Yu K, Veselov, D A, Podoskin, A A, Voronkova, N V, Slipchenko, S O, Ladugin, M A, Bagaev, T A, Marmalyuk, A A, Pikhtin, N A

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Optical absorption in a waveguide based on an n-type AlGaAs heterostructure von Bobretsova, Yu.K., Veselov, D.A., Klimov, A.A., Bakhvalov, K.V., Shamakhov, V.V., Slipchenko, S.O., Andryushkin, V.V., Pikhtin, N.A.

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10-W 4.6-μm quantum cascade lasers von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Losev, S.N., Kognovitskaya, E.A., Lyutetskii, A.V., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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Comparison of AlGaInAs/InP semiconductor lasers (λ = 1450 – 1500 nm) with ultra-narrow and strongly asymmetric waveguides von Volkov, N.A., Svetogorov, V.N., Ryaboshtan, Yu.L., Andreev, A.Yu, Yarotskaya, I.V., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Slipchenko, S.O., Lyutetskii, A.V., Veselov, D.A., Pikhtin, N.A.

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High-power AlGaInAs/InP semiconductor lasers with an ultra-narrow waveguide emitting in the spectral range 1.9−2.0 μm von Svetogorov, V.N., Ryaboshtan, Yu.L., Volkov, N.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.

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InGaAs/AlGaAs/GaAs semiconductor lasers (λ = 900−920 nm) with broadened asymmetric waveguides and improved current–voltage characteristics von Volkov, N.A., Bagaev, T.A., Sabitov, D.R., Andreev, A.Yu, Yarotskaya, I.V., Padalitsa, A.A., Ladugin, M.A., Marmalyuk, A.A., Bakhvalov, K.V., Veselov, D.A., Lyutetskii, A.V., Rudova, N.A., Strelets, V.A., Slipchenko, S.O., Pikhtin, N.A.

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Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers von Bobretsova, Yu.K., Veselov, D.A., Klimov, A.A., Kryuchkov, V.A., Shashkin, I.S., Slipchenko, S.O., Pikhtin, N.A.

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