Isotype n-AlGaAs/n-GaAs Heterostructures Optimized for Efficient Interband Radiative Recombination under Current Pumping von Soboleva, O. S., Slipchenko, S. O., Pikhtin, N. A.

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Operating Characteristics of Semiconductor Quantum Well Lasers as Functions of the Waveguide Region Thickness von Sokolova, Z. N., Pikhtin, N. A, Slipchenko, S. O., Asryan, L. V.

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Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors von Slipchenko, S. O., Soboleva, O. S., Podoskin, A. A., Kirichenko, Y. K., Bagaev, T. A., Yarotskaya, I. V., Pikhtin, N. A.

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Spectroscopic Studies of Integrated GaAs/Si Heterostructures von Seredin, P. V., Goloshchapov, D. L., Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O.

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Analysis of the Threshold Conditions and Lasing Efficiency of Internally Circulating Modes in Large Rectangular Cavities Based on AlGaAs/GaAs/InGaAs Laser Heterostructures von Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.

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Switching Control Model of Closed-Mode Structures in Large Rectangular Cavities Based on AlGaAs/InGaAs/GaAs Laser Heterostructures von Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.

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Modeling the Spatial Switch-On Dynamics of a Laser Thyristor (λ = 905 nm) Based on an AlGaAs/InGaAs/GaAs Multi-Junction Heterostructure von Soboleva, O. S., Golovin, V. S., Yuferev, V. S., Gavrina, P. S., Pikhtin, N. A., Slipchenko, S. O., Podoskin, A. A.

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Study of the Spatial and Current Dynamics of Optical Loss in Semiconductor Laser Heterostructures by Optical Probing von Gavrina, P. S., Soboleva, O. S., Podoskin, A. A., Kazakova, A. E., Kapitonov, V. A., Slipchenko, S. O., Pikhtin, N. A.

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Structural and Spectroscopic Studies of Epitaxial GaAs Layers Grown on Compliant Substrates Based on a Superstructure Layer and Protoporous Silicon von Seredin, P. V., Goloshchapov, D. L., Khudyakov, Yu. Yu, Arsentyev, I. N., Nikolaev, D. N., Pikhtin, N. A., Slipchenko, S. O., Leiste, Harald

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Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers von Podoskin, A. A., Romanovich, D. N., Shashkin, I. S., Gavrina, P. S., Sokolova, Z. N., Slipchenko, S. O., Pikhtin, N. A.

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High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence von Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop’ev, P. S., Pikhtin, N. A.

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Light-current characteristics of high-power pulsed semiconductor lasers (1060 nm) operating at increased (up to 90 °C) temperatures von Gavrina, P S, Podoskin, A A, Fomin, E V, Veselov, D A, Shamakhov, V V, Slipchenko, S O, Pikhtin, N A, Kop'ev, P S

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Metal–Dielectric Mirror Coatings for 4–5-μm Quantum-Cascade Lasers von Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Kuznetsov, E. V., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Babichev, A. V., Kognovitskaya, E. A., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinsky, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

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Dielectric Highly Reflective Mirror Coatings for 4–5 μm Quantum Cascade Lasers von Podgaetskii, K. A., Lobintsov, A. V., Danilov, A. I., Ivanov, A. V., Ladugin, M. A., Marmalyuk, A. A., Dyudelev, V. V., Mikhailov, D. A., Chistyakov, D. V., Babichev, A. V., Savchenko, G. M., Lyutetskii, A. V., Slipchenko, S. O., Pikhtin, N. A., Gladyshev, A. G., Novikov, I. I., Karachinskii, L. Ya, Egorov, A. Yu, Sokolovskii, G. S.

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Experimental technique for studying optical absorption in waveguide layers of semiconductor laser heterostructures von Bobretsova, Yu K, Veselov, D A, Podoskin, A A, Voronkova, N V, Slipchenko, S O, Ladugin, M A, Bagaev, T A, Marmalyuk, A A, Pikhtin, N A

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Development and study of high-power quantum-cascade lasers emitting at 4.5 - 4.6 μm von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Savchenko, G.M., Losev, S.N., Kognovitskaya, E.A., Lyutetskii, A.V., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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Leaky wave in high-power AlGaAs/InGaAs/GaAs semiconductor lasers von Bobretsova, Yu.K., Veselov, D.A., Klimov, A.A., Kryuchkov, V.A., Shashkin, I.S., Slipchenko, S.O., Pikhtin, N.A.

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10-W 4.6-μm quantum cascade lasers von Dudelev, V.V., Mikhailov, D.A., Babichev, A.V., Losev, S.N., Kognovitskaya, E.A., Lyutetskii, A.V., Slipchenko, S.O., Pikhtin, N.A., Gladyshev, A.G., Denisov, D.V., Novikov, I.I., Karachinsky, L.Ya, Kuchinskii, V.I., Egorov, A.Yu, Sokolovskii, G.S.

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Semiconductor AlGaInAs/InP lasers (λ = 1450 - 1500 nm) with a strongly asymmetric waveguide von Volkov, N A, Andreev, A Yu, Yarotskaya, I V, Ryaboshtan, Yu L, Svetogorov, V N, Ladugin, M A, Padalitsa, A A, Marmalyuk, A A, Slipchenko, S O, Lyutetskii, A V, Veselov, D A, Pikhtin, N A

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Triple integrated laser - thyristor von Bagaev, T.A., Ladugin, M.A., Padalitsa, A.A., Marmalyuk, A.A., Kurnyavko, Yu.V., Lobintsov, A.V., Danilov, A.I., Sapozhnikov, S.M., Krichevskii, V.V., Konyaev, V.P., Simakov, V.A., Slipchenko, S.O., Podoskin, A.A., Pikhtin, N.A.

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